Chemical/mechanical polishing of diamond films assisted by molten mixture of LiNO3 and KNO3

Wang, C.Y.; Zhang, F.L.; Kuang, Tongchun; Chen, C.L.

doi:10.1016/j.tsf.2005.08.322

Cited by 52 publications

(12 citation statements)

References 13 publications

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“…Generally, microcrystalline diamond films have rough growth surface and the mean surface roughness ranges from submicron to several microns 4. It is difficult for microcrystalline diamond films to be polished into a smooth surface, although various polishing techniques can be employed 5–7. Even worse, surface recombination may be serious as a result of the damage introduced by polishing 8.…”

Section: Methodsmentioning

confidence: 99%

Study on trapping center and trapping effect in MSM ultraviolet photo‐detector on microcrystalline diamond film

Wang¹,

Chen²,

Wu³

et al. 2010

Physica Status Solidi (a)

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A MSM (metal‐semiconductor‐metal) ultraviolet (UV) photo‐detector was fabricated on a high‐quality diamond film deposited by microwave chemical vapor deposition on a Si substrate. Charge‐based deep level transient spectroscopy (Q‐DLTS) was used for obtaining the information on activation energy (Ea), capture cross section (σs) and concentration (Nt) of trapping centers in the band gap of the diamond film. A shallow level with Ea = 0.213 eV, σs = 9.88 × 10−20 cm2 and Nt = 1.1 × 1011 cm−2 is present in the diamond film. The shallow level may not act as effective recombination center due to the so small activation energy according to the Schockly‐Read‐Hall statistics. The UV photo‐detector presents slow time response, high responsivity and high photoconductive gain under irradiation of 220 nm monochromatic light. These performances indicate that minority carrier trapping effect may play an important role in the UV photo‐detector. The photo‐generated minority carriers (electrons in this work) may be trapped by the shallow level during light irradiation process and then de‐trap slowly via thermal excitation or tunnelling effect after removing the light source, which contributes to the prolonged response time. The trapping effect can also reduce the carrier recombination probability, resulting in the high responsivity and high photoconductive gain.

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Section: Methodsmentioning

confidence: 99%

Study on trapping center and trapping effect in MSM ultraviolet photo‐detector on microcrystalline diamond film

Wang¹,

Chen²,

Wu³

et al. 2010

Physica Status Solidi (a)

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“…These result in very rough surfaces of CVD diamond films. Usually the surface roughness increases rapidly with the film thickness and the mean surface roughness ranges from less than one to several tens of microns [2,3] . Conventional mechanical polishing is widely used in the industrial application of CVD diamond films.…”

Section: Introductionmentioning

confidence: 99%

Plasma-Etching Enhanced Mechanical Polishing for CVD Diamond Films

Zheng

Zhen-hui

et al. 2008

Plasma Sci. Technol.

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Chemically vapor deposited diamond films were etched at different parameters using oxygen plasma produced by a DC (direct current) glow discharge and then polished by a modified mechanical polishing device. Scanning electron microscope, atomic force microscope and Raman spectrometer were used to evaluate the surface states of diamond films before and after polishing. It was found that a moderate plasma etching would produce a lot of etch pits and amorphous carbon on the top surface of diamond film. As a result, the quality and the efficiency of mechanical polishing have been enhanced remarkably.

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“…Conventional chemical mechanical polishing (CMP) used for the planarization of polycrystalline diamond (PCD) and NCD layers usually includes the removal of a large amount of material (several μm) and is quite time consuming. Therefore, it is not applicable for thin NCD films (with thicknesses up to 1 μm).…”

Section: Introductionmentioning

confidence: 99%

Development of a Planarization Process for the Fabrication of Nanocrystalline Diamond Based Photonic Structures

Heupel

Felgen

Merz

et al. 2019

Physica Status Solidi (a)

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A significant reduction of the intrinsic surface roughness of nanocrystalline diamond (NCD) layers (e.g., from 25–50 nm down to ≈ 2–6 nm) is accomplished together with an adjustment of the film thickness applying a two‐step planarization process. Therefore, a spin‐on‐glass (SOG), consisting of the inorganic polymer perhydropolysilazane, is spin‐coated on top of the NCD layer. After baking, a smooth silica‐like layer covered the diamond crystallites. This planar surface is transferred to the NCD surface by a dry etching step, yielding a similar etch selectivity for the diamond and the SOG layer (etching rates of SOG:NCD ≈ 1) applying a mixture of sulfur hexafluoride and oxygen. The planarized surface of the NCD layer led to an enhancement of the uniformity of structures defined by electron beam lithography (EBL), e.g., nanopillars with various diameters as well as two‐dimensional photonic crystal slabs.

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Chemical/mechanical polishing of diamond films assisted by molten mixture of LiNO3 and KNO3

Cited by 52 publications

References 13 publications

Study on trapping center and trapping effect in MSM ultraviolet photo‐detector on microcrystalline diamond film

Study on trapping center and trapping effect in MSM ultraviolet photo‐detector on microcrystalline diamond film

Plasma-Etching Enhanced Mechanical Polishing for CVD Diamond Films

Development of a Planarization Process for the Fabrication of Nanocrystalline Diamond Based Photonic Structures

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