Chemical–mechanical polishing of copper in alkaline media

Luo, Qiuliang; Campbell, Daniel; Babu, S. V.

doi:10.1016/s0040-6090(97)00454-9

Cited by 84 publications

(50 citation statements)

References 13 publications

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“…Recently there is a renewed interest in alkaline system as CMP slurries since acidic slurries, which are widely used in Cu CMP process, may corrode the CMP equipment [5]. Investigation of Cu CMP in alkaline slurries containing ammonical compounds [2,[6][7][8][9], glycine-hydrogen peroxide mixture [10,11] and arginine-hydrogen peroxide mixture [12] have been reported in literature.…”

Section: Introductionmentioning

confidence: 99%

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Electrochemical characterization of Cu dissolution and chemical mechanical polishing in ammonium hydroxide–hydrogen peroxide based slurries

Venkatesh

Ramanathan

2009

J Appl Electrochem

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Chemical mechanical polishing (CMP) of copper in ammonium hydroxide based slurry in the presence of hydrogen peroxide was investigated. The polishing trend was found to be similar to that exhibited by other slurries containing hydrogen peroxide and various complexing agents used for Cu CMP. When the hydrogen peroxide concentration is increased, the polish rate increases, reaches a maximum and then decreases. The location and the magnitude of the maximum depend on the ammonium hydroxide concentration. The dissolution of copper in the NH 4 OHhydrogen peroxide solution was probed by potentiodynamic polarization and electrochemical impedance spectroscopy (EIS) experiments. Electrical equivalent circuit (EEC) and reaction mechanism analysis (RMA) were employed to determine the mechanistic reaction pathway of Cu dissolution in NH 4 OH-hydrogen peroxide system. Based on the RMA analysis, a four step catalytic mechanism with two adsorbed intermediate species is proposed.

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Section: Introductionmentioning

confidence: 99%

“…Various oxidizing agents such as KNO 3 [13], NH 4 NO 3 [2], NaClO 3 [5] and K 3 FeCN 6 [2] have been added to ammonical slurries and the copper polishing in these slurries have been characterized. However, these oxidizers lead only to active dissolution but not to passivation [4].…”

Section: Introductionmentioning

confidence: 99%

Electrochemical characterization of Cu dissolution and chemical mechanical polishing in ammonium hydroxide–hydrogen peroxide based slurries

Venkatesh

Ramanathan

2009

J Appl Electrochem

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“…Several kinds of oxidizing agents, such as H 2 O 2 [5,6,8], HNO 3 [7][8][9][10][11], Fe(NO 3 ) 3 [8,12], NaClO 3 [13] and KIO 3 [14], among others, have been used to form a passive film on a copper surface or to dissolve it into slurries. Although the oxidizing powers of these agents are known, the specific roles of these agents on Cu CMP were not as clear as that found in W CMP [1] or Al CMP [2][3][4]15].…”

Section: Introductionmentioning

confidence: 99%

Effects of hydrogen peroxide and alumina on surface characteristics of copper chemical–mechanical polishing in citric acid slurries

Chen¹,

Tsai²

2004

Materials Chemistry and Physics

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The roles of H 2 O 2 and alumina on the changes of metal removal rate, surface passivation and surface morphology in citric acid (CA) base slurry in simulated Cu chemical-mechanical polishing (CMP) was investigated. X-ray photoelectron spectroscopy (XPS) analysis indicated that H 2 O 2 assisted oxide formation while citric acid promoted anodic dissolution of copper in various slurries that contained 1 wt.% Al 2 O 3 . Atomic force microscopy (AFM) revealed that Al 2 O 3 abrasive particles modified the surface morphology by inducing surface deformation. The results of open circuit potential (OCP) and removal rate measurements clearly demonstrated that there existed a synergistic effect due to the chelating and oxidizing agents in Cu CMP.

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“…[5][6][7][8][9][10] In acidic media, an inhibitor, benzotriazole, is used to control the removal rate and avoid isotropic etching. 5,6 In neutral polish slurries, H 2 O 2 has been used as an oxidizer.…”

Section: Introductionmentioning

confidence: 99%

Effects of electric potential on chemical-mechanical polishing of copper

Liang

2002

Journal of Elec Materi

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The effect of electric potential on the dissolution and polishing behavior of copper in acidic and alkaline media was investigated. The electromechanical polishing mechanism of copper is discussed based on removal rate of copper, pH of slurries, and surface morphology of polished copper. The most interesting phenomenon occurred in chemical-mechanical polishing (CMP) of copper with applied direct current (DC) voltage is the variation of pH during polishing. The dissolution experiments indicated that an acidic agent might have more hydrogen reduced with higher DC potential. The results demonstrated that the application of DC voltage is beneficial to improve planarization of copper polishing in an alkaline slurry.

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Chemical–mechanical polishing of copper in alkaline media

Cited by 84 publications

References 13 publications

Electrochemical characterization of Cu dissolution and chemical mechanical polishing in ammonium hydroxide–hydrogen peroxide based slurries

Electrochemical characterization of Cu dissolution and chemical mechanical polishing in ammonium hydroxide–hydrogen peroxide based slurries

Effects of hydrogen peroxide and alumina on surface characteristics of copper chemical–mechanical polishing in citric acid slurries

Effects of electric potential on chemical-mechanical polishing of copper

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