Chemical interactions in the atomic layer deposition of Ge–Sb–Se–Te films and their ovonic threshold switching behavior

Abstract

Ge–Sb–Se–Te quaternary films were prepared through atomic layer deposition (ALD) for ovonic threshold switching (OTS) applications.

Bulk Glassy GeTe2: A Missing Member of the Tetrahedral GeX2 Family and a Precursor for the Next Generation of Phase-Change Materials

“…Copper tellurogermanate Cu 2 GeTe 3 is an exciting example revealing new perspectives. , We should note that a significant population of triangular rings in Cu 2 GeTe 3 are also present in liquid GeTe 2 , Figure , revealing a resemblance in intermediate-range structures. Atomic layer deposition of GeTe 2 –Sb 2 Te 3 thin films , offers additional horizons for nanoscale phase-change random-access memory based on germanium ditelluride …”

“…Atomic layer deposition of GeTe 2 −Sb 2 Te 3 thin films 110,111 offers additional horizons for nanoscale phasechange random-access memory based on germanium ditelluride. 112…”

Cyclic Silylselenides: Convenient Selenium Precursors for Atomic Layer Deposition

“…Bis(trialkylsilyl)selenides (R 3 Si−Se−SiR 3 ) were introduced in 2009 and were demonstrated as suitable selenium precursors for deposition of various metal selenides. Variation of the R‐substituent allowed tailoring volatility and reactivity towards metal halides often used in ALD and provide repeatable results . However, linear bis(trialkylsilyl)selenides are generally prone to quick hydrolysis and oxidation and their handling is less comfortable.…”

“…Variation of the Rsubstituent allowed tailoring volatility and reactivity towards metal halides often used in ALD and provide repeatable results. [17][18][19] However, linear bis(trialkylsilyl)selenides are generally prone to quick hydrolysis and oxidation and their handling is less comfortable. Hence, we report herein cyclic silylselenides 1-3 that preparation is outlined in Scheme 1.…”

A review on metal-doped chalcogenide films and their effect on various optoelectronic properties for different applications

“…Apart from bismuth, Sb can unpin Fermi level and supports carrier-type reversal, from p 4 n, helping to expand the glassy region of the network, enhance thermal stability, and increment in IR transmission, therefore reshaping the chemical composition structures by considering the perspective of device fabrication. [29][30][31] This review is based on the doping of metallic impurities in chalcogenides and summarizes their doping behaviors. Here, we focused on the doping impact of bismuth, antimony, silver, tin, and copper on the characteristics of different chalcogenide thin lms and discussed the same.…”