Chemical etching of (100) GaAs in a sulphuric acid-hydrogen peroxide-water system

Barycka, Irena; Zubel, Irena

doi:10.1007/bf01233125

Cited by 21 publications

(13 citation statements)

References 10 publications

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“…Gallium phosphide films on silicon were patterned by photolithography and the GaP was etched with a 5:1:1 mixture of deionized water, 97% sulfuric acid, and 30% hydrogen peroxide, similar to approaches previously used for GaAs etching 27 . Etch completion was judged by eye and confirmed by dipping in buffered hydrofluoric acid, owing to the hydrophobic nature of clean Si, whereas Si covered by GaP remained hydrophilic.…”

Section: Methodsmentioning

confidence: 99%

Fabrication of Single Crystal Gallium Phosphide Thin Films on Glass

Emmer

Chen

Saive

et al. 2017

Sci Rep

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Due to its high refractive index and low absorption coefficient, gallium phosphide is an ideal material for photonic structures targeted at the visible wavelengths. However, these properties are only realized with high quality epitaxial growth, which limits substrate choice and thus possible photonic applications. In this work, we report the fabrication of single crystal gallium phosphide thin films on transparent glass substrates via transfer bonding. GaP thin films on Si (001) and (112) grown by MOCVD are bonded to glass, and then the growth substrate is removed with a XeF2 vapor etch. The resulting GaP films have surface roughnesses below 1 nm RMS and exhibit room temperature band edge photoluminescence. Magnesium doping yielded p-type films with a carrier density of 1.6 × 1017 cm−3 that exhibited mobilities as high as 16 cm2V−1s−1. Due to their unique optical properties, these films hold much promise for use in advanced optical devices.

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Section: Methodsmentioning

confidence: 99%

Fabrication of Single Crystal Gallium Phosphide Thin Films on Glass

Emmer

Chen

Saive

et al. 2017

Sci Rep

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“…The etching bath is constituted by (1) an oxidant (Br 2 /HNO 3 /H 2 O 2 that oxidizes the surface on several nanometers, (2) an acid component (H 2 SO 4 /H 3 PO 4 /HF/HCl/citric acid/HNO 3 or a base (NH 4 OH/NaOH) that allows the dissolution of oxidized surface, and eventually (3) a solvent (H 2 O) enabling a better mobility of particles and huge variations in dissolution rates. 20 21 The whole process of etching is the following [22][23][24][25] (Fig. 1): -adsorption of oxidative agent and diffusion through the oxidized native layer towards the interface -oxidation reaction between the oxidative agent and the atoms present at the surface of the material -adsorption of the acid or base components in the oxidative native layer -solubilisation of the oxide formed (by a complex formation under the effect of the acid or the base component) -desorption and evacuation of dissolved complexes.…”

Section: State-of-the-artmentioning

confidence: 99%

“…1, step 2). The surface topography of the material will strongly depend on the type of reaction, that is either dominated by the diffusion or the reaction process: [21][22][23][24][25][26][27] -In the case of a diffusion limited process, only the diffusion of chemical species limits the global reaction rate. If the repartition of species is homogeneous near the surface, the etch rate will be the same for any material crystal plate orientations: the etching follows an isotropic process and the surface is polished.…”

Section: State-of-the-artmentioning

confidence: 99%

Micro Structuration of GaAs Surface by Wet Etching: Towards a Specific Surface Behavior

Bienaime

Élie-Caille

Leblois

2012

j nanosci nanotechnol

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Resonant microelectromechanical systems are promising devices for real time and highly sensitive measurements. The sensitivity of such sensors to additional mass loadings which can be increased thanks to the miniaturisation of devices is of prime importance for biological applications. The miniaturisation of structures passes through a photolithographic process and wet chemical etching. So, this paper presents new results on the anisotropic chemical etching of the gallium arsenide (GaAs) crystal used for this application, in several solutions. This paper focuses on the micro/nanostructuration of the sensing surface to increase the sensor sensitivity. Indeed, this active surface will be biofunctionalized to operate in biological liquid media in view of biomolecules detection. Several experimental conditions of etching bath composition, concentration and temperature were examined to obtain a large variety of geometrical surfaces topographies and roughness. According to the orientation dependence of the chemical etching process, the experiments were also performed on various GaAs crystal plates. The bath 1 H3PO4:9 H2O2:1 H2O appeared to be particularly adapted to the fabrication of the GaAs microstructured membrane: indeed, the bath is highly stable, anisotropic, and, as a function of temperature, it allows the production of a large variety of GaAs surface topographies.

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“…Microcantilevers were released via back-side bulk micromachining in two solutions. The H 2 SO 4 :H 2 O 2 :H 2 O mixture [11,12] was used as a fast etchant which was followed by a finer H 3 PO 4 :H 2 O 2 :H 2 O (1:2:8) etchant [13,14]. The experiments were performed with various compositions, un-or stirred, in the temperature range of 25-30°C.…”

Section: Experimental Partmentioning

confidence: 99%

Detection elements for on-cantilever laboratory

Scepka¹,

Gregušová²,

Gaži³

et al. 2012

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems

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Micrometer-scaled cantilever-based sensors can be utilized in electrostatic and magnetic measurements and also are perspective for future chemical and biological sensing applications. GaAs is the most used III-V material for cantilever probe development thanks to its optoelectronic properties, high mobility 2D electrons, high piezoresistivity and sufficient mechanical properties. Novel sensing probes, prepared by integration of various detection elements are perspective for specific requirements. This work is mainly focused on technology process of such micro-CLs and also on fabrication of detection elements (transistors) with the aim to integrate directly on the micro-CLs. A.J. Brook have fabricated on-CL micrometer-scaled Hall probe with piezoresistor [7].Using metal organic chemical vapor deposition (MOCVD), heterostructures with triangular or rectangular quantum wells (QW) can be prepared within the CLs. Such QW can serve as active layers with two-dimensional electron gas (2DEG) which can be utilized for definition of following on-CL devices: resistors, transistors, Hall probes, etc. Realization of the on-CL devices will improve the sensitivity of the sensors and it will open new application possibilities and functionalities, thus creating the sensor of choice for chemistry, medicine and for environmental purposes.

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Chemical etching of (100) GaAs in a sulphuric acid-hydrogen peroxide-water system

Cited by 21 publications

References 10 publications

Fabrication of Single Crystal Gallium Phosphide Thin Films on Glass

Fabrication of Single Crystal Gallium Phosphide Thin Films on Glass

Micro Structuration of GaAs Surface by Wet Etching: Towards a Specific Surface Behavior

Detection elements for on-cantilever laboratory

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