2010
DOI: 10.1021/nn100508g
|View full text |Cite
|
Sign up to set email alerts
|

Chemical Doping of Large-Area Stacked Graphene Films for Use as Transparent, Conducting Electrodes

Abstract: Graphene is considered a leading candidate to replace conventional transparent conducting electrodes because of its high transparency and exceptional transport properties. The effect of chemical p-type doping on graphene stacks was studied in order to reduce the sheet resistance of graphene films to values approaching those of conventional transparent conducting oxides. In this report, we show that large-area, stacked graphene films are effectively p-doped with nitric acid. The doping decreases the sheet resis… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

13
292
1
1

Year Published

2011
2011
2023
2023

Publication Types

Select...
6
4

Relationship

1
9

Authors

Journals

citations
Cited by 335 publications
(309 citation statements)
references
References 34 publications
13
292
1
1
Order By: Relevance
“…If we assume that the R s of a graphene lm scales with the resistance of the contact between two akes (R(CR)) and the resistance of the graphene ake itself (R(GF)), then the number of contacts would give a major contribution to the overall resistance. Here we assume that R s for a ake is approximately constant for all sizes as it depends on the defect density, [31][32][33] or doping, [34][35][36][37][38][39][40] etc. Since the large (90% of population >1 mm) graphene akes of EG + Plasdone S-630 assemble into a layer with fewer contacts between each other compared to a layer of the PNB-GCNF graphene (90% of population <60 nm), then the overall sheet resistance of the former lm (on both substrates) is much lower than that of the latter.…”
Section: Sheet Resistance Evaluation Of Inkjet Printed Graphene Lms mentioning
confidence: 99%
“…If we assume that the R s of a graphene lm scales with the resistance of the contact between two akes (R(CR)) and the resistance of the graphene ake itself (R(GF)), then the number of contacts would give a major contribution to the overall resistance. Here we assume that R s for a ake is approximately constant for all sizes as it depends on the defect density, [31][32][33] or doping, [34][35][36][37][38][39][40] etc. Since the large (90% of population >1 mm) graphene akes of EG + Plasdone S-630 assemble into a layer with fewer contacts between each other compared to a layer of the PNB-GCNF graphene (90% of population <60 nm), then the overall sheet resistance of the former lm (on both substrates) is much lower than that of the latter.…”
Section: Sheet Resistance Evaluation Of Inkjet Printed Graphene Lms mentioning
confidence: 99%
“…The unique electrical and mechanical properties of graphene make it an excellent choice for a flexible transparent conductor [16][17][18][19] . Graphene can be chemically doped to a carrier density of B10 13 cm À 2 while maintaining high carrier mobility 20,21 , leading to a surface resistance comparable to that of ITO.…”
mentioning
confidence: 99%
“…Therefore, chemical heterogeneous doping is a useful method to improve the graphene sheet resistance. SOCl 2 ,60, 61 SOBr 2 ,62 HNO 3 ,7, 60, 62, 63, 64 and AuCl 3 64, 65 were commonly used as chemical dopants. The chemical dopants were always dissolved in a solvent and then spin‐coated onto the graphene film on the target substrate.…”
Section: Properties and Preparationmentioning
confidence: 99%