Chemical character of BC<sub>x</sub>N<sub>y</sub> layers grown by CVD with trimethylamine borane

Baake, Olaf; Hoffmann, P.; Klein, Andreas; Pollakowski, B.; Beckhoff, Burkhard; Ensinger, Wolfgang; Косинова, М. Л.; Файнер, Н. И.; Sulyaeva, V. S.; Трунова, В. А.

doi:10.1002/xrs.1117

Cited by 26 publications

(29 citation statements)

References 28 publications

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“…Micro-and nanoparticles deposited on wafer surfaces can be likewise speciated [104]. Even nanolayers mainly composed of light elements have been investigated by TXRF-NEXAFS [105,106]. Crystal spectrometers can be employed in the hard X-ray range to determine relevant atomic data such as transition probabilities when a sufficiently high energy resolution is needed.…”

Section: Reviewmentioning

confidence: 99%

A quarter‐century of metrology using synchrotron radiation by PTB in Berlin

Beckhoff¹,

Gottwald²,

Klein³

et al. 2009

Physica Status Solidi (b)

131

114

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For more than 25 years, the Physikalisch‐Technische Bundesanstalt has been strongly engaged in the field of metrology using synchrotron radiation. In Berlin, this research programme started together with the user operation of the electron storage ring BESSY I in the early 1980s. At the beginning, the work was focused on fundamental radiometry, i.e. using the storage ring as a primary radiation source standard and operating beamlines for source and detector calibration in the vacuum ultraviolet spectral range. Meanwhile, at the electron storage rings BESSY II and Metrology Light Source in Berlin‐Adlershof, the activities have been extended to a broad range of fundamental and applied photon metrology in the range from the far infrared to hard X‐rays, including methods like cryogenic radiometry, reflectometry and X‐ray fluorescence spectroscopy. In the present review, we give a short historical introduction to this work, describe our laboratories and the basic radiometric principles, and present examples of recent applications, largely performed within the framework of scientific cooperations with external partners from industry and research. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Reviewmentioning

confidence: 99%

A quarter‐century of metrology using synchrotron radiation by PTB in Berlin

Beckhoff¹,

Gottwald²,

Klein³

et al. 2009

Physica Status Solidi (b)

131

114

View full text Add to dashboard Cite

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“…In the TXRF-NEXAFS experiments, the signal identification was done by comparison with literature data and by application of reference materials [8,10]. The TXRF-NEXAFS spectra of the elements in the BC x N y layers produced with H 2 are shown as examples in Fig.…”

Section: Chemical Characterization Of the Samplesmentioning

confidence: 99%

“…-6-2), respectively. The temperature of 700°C was chosen at LPCVD conditions [8]. The aspired thickness of the BC x N y layer should be 5-10 nm.…”

Section: Synthesis Of the Samplesmentioning

confidence: 99%

Chemical interactions in the layered system BC x N y /Ni(Cu)/Si, produced by CVD at high temperature

et al. 2012

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Layered samples Si(100)/C/Ni/BC(x)N(y) and Si(100)/C/Cu/BC(x)N(y) were produced by physical vapor deposition of a metal (Ni, Cu, resp.) and low-pressure chemical vapor deposition of the boron carbonitride on a Si(100) substrate. Between the Si and the Ni (Cu) and on the surface of the Ni (Cu) layer, thin carbon layers were deposited, as a diffusion barrier or as a protection against oxidation, respectively. Afterwards, the surface carbon layer was removed. As precursor, trimethylamine borane and, as an auxiliary gas, H(2) and NH(3) were used, respectively. The chemical compositions of the layers and of the interfaces in between were characterized by total-reflection X-ray fluorescence spectrometry combined with near-edge X-ray absorption fine-structure spectroscopy, X-ray photoelectron spectroscopy, and secondary ion mass spectrometry. The application of H(2) yielded the BC(x)N(y) compound whereas the use of NH(3) led to a mixture of h-BN and graphitic carbon. At the BC(x)N(y)/metal interface, metal borides could be identified. At the relatively high synthesis temperature of 700 °C, broad regions of Cu or Ni and Si were observed between the metal layer and the substrate Si.

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“…9 Dense (pore-free) BCN films with a low dielectric constant in the range of 1.9 to 2.1 have been successfully demonstrated. 10 Several methods of preparing boron carbon nitride films have been reported, such as chemical vapor deposition (CVD), 11,12 plasma enhanced CVD, 13 ion beam deposition, 14,15 cathodic arc plasma deposition 16 pulsed laser deposition 17,18 and DC and RF magnetron sputtering. 19,20 Also, shock wave compression or high pressure/high temperature techniques (HP/HT) have been used.…”

mentioning

confidence: 99%

“…The BCN films with different compositions can be obtained by varying the power to the composite target in dual target sputtering. 11 Pan et al prepared BCN films by PLD from a sintered B 4 C target. The films prepared were found to be smooth and adhered well to the substrate.…”

mentioning

confidence: 99%

Studies on Electrical Properties of RF Sputtered Deposited Boron Carbon Nitride Thin Films

Prakash

Sundaram

2015

ECS J. Solid State Sci. Technol.

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Boron carbon nitride (BCN) films were prepared by reactive magnetron sputtering from a B 4 C target and deposited to make metal-insulator-metal (MIM) sandwich structures using aluminum as the top and bottom electrodes. BCN films were deposited at various N 2 /Ar gas flow ratios, substrate temperatures. The electrical characterization of the MIM devices includes capacitance vs. voltage (C-V), current vs voltage, and breakdown voltage characteristics. The above characterizations were performed as a function of deposition parameters. By varying the nitrogen concentration in the deposited films and substrate deposition temperatures, the electrical properties of BCN can be tuned accordingly. BCN films having dielectric constant as low as 2.13 with high dielectric breakdown strength of 3.4 MV/cm and resistivity of 3 × 10 12 .cm were achieved. Inter layer dielectric (ILD) materials play the role of isolating electrically conducting and semiconducting features and films.1 The interconnect delay (τ = R × C) due to constant shrinking of device size can be reduced not only by the resistance of the conductor but also by decreasing the capacitance of ILD. A wiring metal with low resistivity and a high quality insulating film with a low dielectric constant may lead to a reduction of the wiring capacitance. There exist atomic bonding similarities amongst boron, carbon, and nitrogen that allow formation of compounds with a wide compositional range. ILD is made up of smaller atoms/ions of C, B which has comparatively lower polarizability and thus has lower dielectric constant.2 BCN compounds have been expected to combine the excellent properties of B 4 C, BN and C 3 N 4 , with their properties adjustable, depending on composition and structure.3 The electrical properties of BCN compounds are thought to be intermediate between those of semi metallic graphite and insulating hexagonal-BN (h-BN).4,5 The boron-carbonnitrogen phase diagram contains interesting phases, such as diamond, graphite, fullerene, cubic-BN, B 4 C and there is also a hypothetical C 3 N 4 . This ternary alloy is expected to combine properties of diamond, cubic boron nitride, tetragonal amorphous carbon and boron carbide.6 Also, the ability to control the bandgap (Eg) by changing the atomic composition and structure makes them suitable for the application in electronic and photonic devices. 7,8 As graphite is semi metallic and h-BN is insulating (bandgap >3.8 eV), it is expected that such a hybrid between semi metallic graphite and insulating h-BN may show adjusted semiconductor properties.9 Dense (pore-free) BCN films with a low dielectric constant in the range of 1. 19,20 Also, shock wave compression or high pressure/high temperature techniques (HP/HT) have been used. The BCN films with different compositions can be obtained by varying the power to the composite target in dual target sputtering.11 Pan et al. prepared BCN films by PLD from a sintered B 4 C target. The films prepared were found to be smooth and adhered well to the substrate. They also observed th...

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Chemical character of BC_xN_y layers grown by CVD with trimethylamine borane

Cited by 26 publications

References 28 publications

A quarter‐century of metrology using synchrotron radiation by PTB in Berlin

A quarter‐century of metrology using synchrotron radiation by PTB in Berlin

Chemical interactions in the layered system BC x N y /Ni(Cu)/Si, produced by CVD at high temperature

Studies on Electrical Properties of RF Sputtered Deposited Boron Carbon Nitride Thin Films

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Chemical character of BCxNy layers grown by CVD with trimethylamine borane

Cited by 26 publications

References 28 publications

A quarter‐century of metrology using synchrotron radiation by PTB in Berlin

A quarter‐century of metrology using synchrotron radiation by PTB in Berlin

Chemical interactions in the layered system BC x N y /Ni(Cu)/Si, produced by CVD at high temperature

Studies on Electrical Properties of RF Sputtered Deposited Boron Carbon Nitride Thin Films

Contact Info

Product

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Chemical character of BC_xN_y layers grown by CVD with trimethylamine borane