Chemical beam epitaxy growth of tensile-strained quantum well heterostructures for laser application

Garcia, J. C.; Lebkiri, Ahmed; Fily, A.; Collot, Ph.; Massies, J.; Leroux, M.

doi:10.1016/s0022-0248(96)01017-2

Journal of Crystal Growth

1997

DOI: 10.1016/s0022-0248(96)01017-2

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Chemical beam epitaxy growth of tensile-strained quantum well heterostructures for laser application

J. C. Garcia¹,

Ahmed Lebkiri²,

A. Fily³

et al.

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2008

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Photoluminescence Properties of Tensile-Strained GaAsP/GaInP Single Quantum Wells Grown By Metal Organic Chemical Vapor Deposition

Zhong¹,

Ma²

2008

jjap

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Tensile-strained GaAsP/GaInP single quantum well (QW) laser diode (LD) structures have been grown by low-pressure metal organic chemical vapor deposition (LP-MOCVD) and related photoluminescence (PL) properties have been investigated in detail. The samples have the same well thickness of 16 nm but different P compositions in a GaAsP QW. Two peaks in roomtemperature (RT) PL spectra are observed for samples with a P composition larger than 0.10. Temperature-and excitationpower-dependent PL spectra have been measured for a sample with a P composition of 0.15. It is found that the two peaks have a 35 meV energy separation independent of temperature and only the low-energy peak exists below 85 K. Additionally, both peak intensities exhibit a monotonous increase as excitation power increases. Analyses indicate that the two peaks arise from the intrinsic-exciton recombination mechanisms of electron-heavy hole (e-hh) and electron-light hole (e-lh). A theoretical calculation based on model-solid theory, taking into account the spin-orbit splitting energy, shows good agreement with our experimental results. The temperature dependence of PL intensity ratio is well explained using the spontaneous emission theory for e-lh and e-hh transitions, from which the ratio can be characterized mainly by the energy separation between the hh and lh states.

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Photoluminescence Properties of Tensile-Strained GaAsP/GaInP Single Quantum Wells Grown By Metal Organic Chemical Vapor Deposition

Zhong¹,

Ma²

2008

jjap

View full text Add to dashboard Cite

show abstract

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Chemical beam epitaxy growth of tensile-strained quantum well heterostructures for laser application

Cited by 1 publication

References 15 publications

Photoluminescence Properties of Tensile-Strained GaAsP/GaInP Single Quantum Wells Grown By Metal Organic Chemical Vapor Deposition

Photoluminescence Properties of Tensile-Strained GaAsP/GaInP Single Quantum Wells Grown By Metal Organic Chemical Vapor Deposition

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