Chemical and electrical passivation of Si(111) surfaces

Tian, Fangyuan; Yang, Dan; Opila, R. L.; Teplyakov, Andrew V.

doi:10.1016/j.apsusc.2011.11.030

Cited by 39 publications

(32 citation statements)

References 30 publications

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“…Tian et al examined the difference in passivation of H‐terminated silicon (111) surfaces treated by either an RCA clean and NH 4 F or a pirhana etch and 10% HF dip. It was demonstrated the latter gave the highest lifetime …”

Section: Processing Issuesmentioning

confidence: 99%

“…It was demonstrated the latter gave the highest lifetime. [88] Grant et al demonstrated that not only does chemical cleaning and oxidation provide good surface conditioning prior to immersion in HF, etching the silicon surface in 25% tetramethylammonium hydroxide (TMAH) prior to immersion in the HF solution provides a superior surface condition for HF passivation. [28,29] It was postulated that higher hydrogen coverage occurs on these surfaces due to the micro-roughness present after the TMAH etch.…”

Section: Hf Based Passivationmentioning

confidence: 99%

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Temporary Surface Passivation for Characterisation of Bulk Defects in Silicon: A Review

Grant

Murphy

2017

Physica Rapid Research Ltrs

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Accurate measurements of the bulk minority carrier lifetime in high-quality silicon materials is challenging due to the influence of surface recombination. Conventional surface passivation processes such as thermal oxidation or dielectric deposition often modify the bulk lifetime significantly before measurement. Temporary surface passivation processes at room or very low temperatures enable a more accurate measurement of the true bulk lifetime, as they limit thermal reconfiguration of bulk defects and minimize bulk hydrogenation. In this article we review the state-of-the-art for temporary passivation schemes, including liquid immersion passivation based upon acids, halogen-alcohols and benzyl-alcohols, and thin film passivation usually based on organic substances. We highlight how exceptional surface passivation (surface recombination velocity below 1 cm s À1 ) can be achieved by some types of temporary passivation. From an extensive review of available data in the literature, we find p-type silicon can be best passivated by hydrofluoric acid containing solutions, with superacid-based thin films showing a slight superiority in the n-type case. We review the practical considerations associated with temporary passivation, including sample cleaning, passivation activation, and stability. We highlight examples of how temporary passivation can assist in the development of improved silicon materials for photovoltaic applications, and provide an outlook for the future of the field.

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Section: Processing Issuesmentioning

confidence: 99%

Section: Hf Based Passivationmentioning

confidence: 99%

Temporary Surface Passivation for Characterisation of Bulk Defects in Silicon: A Review

Grant

Murphy

2017

Physica Rapid Research Ltrs

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“…[14] Nonetheless, al imiting aspect of Si-based composite electrodes is the requirementt op rocess, store and, use the electrodes in an inert atmosphere owing to the high reactivity of pristine or hydro-genatedS in anoparticles. [33,35,[74][75][76] To evaluate the possible processing and storage of modifiedS ic omposite electrodes under ambient conditions, the variation of the electronic conductivity (s)a nd specific capacity werem onitored with respect to exposure/storage time. [33,35,[74][75][76] To evaluate the possible processing and storage of modifiedS ic omposite electrodes under ambient conditions, the variation of the electronic conductivity (s)a nd specific capacity werem onitored with respect to exposure/storage time.…”

Section: Storage Of Si Composite Electrodesmentioning

confidence: 99%

“…This is partly because the commercially used active materials,s uch as LiCoO 2 and graphite, have small volumetric changes (< 10 %) during charging andd ischarging cycles. [7,[32][33][34][35] In this regard, the covalenta ttachment of organic molecules could potentially passivate the surface and minimize oxidation [7,32,34,35] to enable processing under less controlled conditions. However, this is not the case for Si-based anode materials, which have been proposed as high-capacity anode materials for Li-ion batteries.…”

Section: Introductionmentioning

confidence: 99%

Effects of the Formulations of Silicon‐Based Composite Anodes on their Mechanical, Storage, and Electrochemical Properties

Assresahegn

Bélanger

2017

ChemSusChem

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In this work, the effects of the formulation of silicon-based composite anodes on their mechanical, storage, and electrochemical properties were investigated. The electrode formulation was changed through the use of hydrogenated or modified (through the covalent attachment of a binding additive such as polyacrylic acid) silicon and acetylene black or graphene sheets as conducting additives. A composite anode with a covalently grafted binder had the highest elongation without breakages and strong adhesion to the current collector. These mechanical properties depend significantly on the conductive carbon additive used and the use of graphene sheets instead of acetylene black can improve elongation and adhesion significantly. After 180 days of storage under ambient conditions, the electronic conductivity and discharge capacity of the modified silicon electrode showed much smaller decreases in these properties than those of the hydrogenated silicon composite electrode, indicating that the modification can result in passivation and a constant composition of the active material. Moreover, the composite Si anode has a high packing density. Consequently, thin-film electrodes with very high material loadings can be prepared without decreased electrochemical performance.

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“…After a standard RCA (Radio Corporation of America) cleaning [13], 2-nm SiO 2 was grown on the wafer by thermal dry oxidation. Then 2-nm LaON was deposited on the SiO 2 by reactive sputtering using a La 2 O 3 target in a mixed Ar and N 2 ambient.…”

Section: Methodsmentioning

confidence: 99%

LaTiON/LaON as band-engineered charge-trapping layer for nonvolatile memory applications

2012

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Charge-trapping characteristics of stacked LaTiON/LaON film were investigated based on Al/Al 2 O 3 / LaTiON-LaON/SiO 2 /Si (band-engineered MONOS) capacitors. The physical properties of the high-k films were analyzed by X-ray diffraction, transmission electron microscopy and X-ray photoelectron spectroscopy. The band profile of this band-engineered MONOS device was characterized by investigating the current-conduction mechanism. By adopting stacked LaTiON/LaON film instead of LaON film as charge-trapping layer, improved electrical properties can be achieved in terms of larger memory window (5.4 V at ±10-V sweeping voltage), higher program speed with lower operating gate voltage (2.1 V at 100-µs +6 V), and smaller charge loss rate at 125°C, mainly due to the variable tunneling path of charge carriers under program/erase and retention modes (realized by the band-engineered chargetrapping layer), high trap density of LaTiON, and large barrier height at LaTiON/SiO 2 (2.3 eV).

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Chemical and electrical passivation of Si(111) surfaces

Cited by 39 publications

References 30 publications

Temporary Surface Passivation for Characterisation of Bulk Defects in Silicon: A Review

Temporary Surface Passivation for Characterisation of Bulk Defects in Silicon: A Review

Effects of the Formulations of Silicon‐Based Composite Anodes on their Mechanical, Storage, and Electrochemical Properties

LaTiON/LaON as band-engineered charge-trapping layer for nonvolatile memory applications

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