Charge tunneling across strongly inhomogeneous potential barriers in metallic heterostructures: A simplified theoretical analysis and possible experimental tests

Belogolovskii, Mikhail

doi:10.1016/j.apsusc.2014.04.049

Cited by 6 publications

(5 citation statements)

References 23 publications

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“…for each sample, the problem is simplified by its inherent complexity which manifests itself in the large number of degrees of freedom in very strongly disordered dielectric layers and just in this case, as was argued in our previous papers [8,9], ( ) D ρ may exhibit substantial universality.…”

Section: ( ) D ρmentioning

confidence: 88%

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Analysis of Internally Shunted Josephson Junctions

Lacquaniti

Cassiago

Leo

et al. 2016

IEEE Trans. Appl. Supercond.

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Following the ever-rising demand for new functionalities and novel materials in superconducting circuitry, we provide a complete view on the self-shunting problem in Josephson junctions relating it to specific features of a multichannel weak link between electrodes where averaging over the channels yields a bimodal distribution of transparencies with maxima near unity and zero. We provide two examples of such internally-shunted devices, four-layered Nb/Al-Al oxide-Nb junctions with strongly disordered nm-thick insulating layers where stochastic distribution of transparencies takes place on a local rather than a global scale and MoRe/W-doped Si-Si-MoRe devices with strongly inhomogeneous silicon interlayers partly doped by metallic nanoclusters where the main charge transport occurs across resonance-percolating trajectories. We show how the predicted universal distribution function of transmission coefficients can be verified experimentally without any fitting parameters and analyze some old and new experimental data from this perspective. We believe that our results can form a base for novel four-layered Josephson junctions with enhanced superconducting properties and, at the same time, well-separated metallic electrodes.

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Section: ( ) D ρmentioning

confidence: 88%

“…is further supposed to be a uniform random variable distributed from zero to infinity [9]. Then the disorder-averaged macroscopic conductance of the junction equals to…”

Section: ( ) D ρmentioning

confidence: 99%

Analysis of Internally Shunted Josephson Junctions

Lacquaniti

Cassiago

Leo

et al. 2016

IEEE Trans. Appl. Supercond.

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“…where x k is the wave-vector component in the metallic electrodes normal to metal-insulator interfaces, d is the barrier thickness. Let us simplify the relation (4) starting with the case of an ultrathin potential barrier with a constant height that is extending from x = 0 to x kd , respectively [48]. We can expect that the Lorentzian approximation for the transmission coefficient Z is appropriate in the intermediate instances as well.…”

Section: Inhomogeneous Distribution Of the Channel Transmission Proba...mentioning

confidence: 99%

Intrinsically shunted Josephson junctions for electronics applications

Belogolovskii

Zhitlukhina

Lacquaniti

et al. 2017

Low Temperature Physics

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Conventional Josephson metal-insulator-metal devices are inherently underdamped and exhibit hysteretic current-voltage response due to a very high subgap resistance compared to that in the normal state. At the same time, overdamped junctions with single-valued characteristics are needed for most superconducting digital applications. The usual way to overcome the hysteretic behavior is to place an external low-resistance normal-metal shunt in parallel with each junction.

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“…В соответствии с нашим предположением в основном электронном состоянии такие структуры имеют очень маленькое сопротивление, а в возбуждённом состоянии их сопротивление становится уже значительным. В следующем подразделе мы приводим теорию этого явления, которая базируется на описании эффекта резонансного туннелирования через полупроводник с внедрёнными в него примесными центрами [4] и модели двухуровневой системы с вырожденным возбуждённым состоянием Хальбриттера и др. [5].…”

Section: Introductionunclassified

Negative $N$-Type Differential Resistance in Current–Voltage Characteristics of Metal Heterostructures

Shamaev¹,

Zhitlukhina²

2018

Metallofiz. Noveishie Tekhnol.

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Предложен физический механизм, ответственный за возникновение участка отрицательного дифференциального сопротивления N-типа в вольт-амперных характеристиках металлических гетероструктур с туннельным барьером, образованным полупроводниковой прослойкой с внедрёнными в неё примесными центрами. Развитая в работе теория основана на предположении о наличии в потенциальном барьере локализованных двухуровневых структур, которые определяют величину тока, протекающего через соответствующий транспортный канал. Проанализировано влияние параметров задачи на туннельный ток.

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Charge tunneling across strongly inhomogeneous potential barriers in metallic heterostructures: A simplified theoretical analysis and possible experimental tests

Cited by 6 publications

References 23 publications

Analysis of Internally Shunted Josephson Junctions

Analysis of Internally Shunted Josephson Junctions

Intrinsically shunted Josephson junctions for electronics applications

Negative $N$-Type Differential Resistance in Current–Voltage Characteristics of Metal Heterostructures

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