Charge trapping defects in Si/SiO2/Hf(1−x)SixO2 film stacks characterized by spectroscopic second-harmonic generation

Abstract

Articles you may be interested inResonant photoionization of defects in Si / SiO 2 / HfO 2 film stacks observed by second-harmonic generation Appl. Phys. Lett. 95, 052906 (2009);

Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation

“…In the same paper, detrapping was evidenced by a decrease of the SHG signal with time, and was significantly suppressed in high-k films, in contrast to SiO2, due to reduced leakage currents. Charge trapping defects in high-k stacks such as Si/SiO2/HfO2, have been characterized by spectroscopic SHG and time-dependent EFISH generation [17]: oxygen vacancy defects in HfO2 films were identified and charge trapping in Hf-silicate samples was shown to be dominated by oxide surface defects. For the particular case of Al2O3, spectroscopic and time-dependent SHG revealed a fixed negative charge in thin Al2O3 layers that increases after annealing (from 10 11 cm -2 before anneal, up to 10 12 -10 13 cm -2 after anneal) [18].…”

Process driven oxygen redistribution and control in Si0.7Ge0.3/HfO2/TaN gate stack film systems

“…1,2 Additionally, in recent years, continued equivalent oxide thickness (EOT) scaling has included efforts focused on extreme reduction and elimination of the unintentional SiO x low-k layer interfacial (IL) between Si and the Hf-based layer. 3 Thinning the SiO x brings the highk layer in close proximity to the Si channel region which results in degradation of the carrier mobility in metal-oxide-semiconductor field effect transistor (MOSFET) devices.…”