2001
DOI: 10.1557/proc-666-f3.6
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Charge transport through localized states in sputtered amorphous silicon suboxides

Abstract: Using an RF magnetron sputtering technique, thin layers (∼500 nm) of amorphous silicon suboxides (a-SiOx) were deposited, with oxygen/silicon ratios x ranging from 0 to 1.8. These layers contain a large density (1020−1021 cm−3) of, mostly silicon dangling bond, defect states. The level of conduction decreases several orders of magnitude with increasing x. The temperature dependence of the DC conductivity showed that the variable range hopping conduction mechanism is dominant for all x, over the temperature ran… Show more

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Cited by 3 publications
(2 citation statements)
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“…In regime I ( Figure 8 ), conduction is considered to occur within the amorphous silica network, as the amount of sp 2 carbon is very low (ϕ C < 1 vol.%) [ 70 , 71 ]. According to Hapert, high concentration of silicon dangling bonds is present within amorphous silica SiO x , showing a VRH transport within localized states [ 70 , 71 ]. A VRH conduction mechanism is also likely for low-carbon SiOC/C materials.…”
Section: Resultsmentioning
confidence: 99%
“…In regime I ( Figure 8 ), conduction is considered to occur within the amorphous silica network, as the amount of sp 2 carbon is very low (ϕ C < 1 vol.%) [ 70 , 71 ]. According to Hapert, high concentration of silicon dangling bonds is present within amorphous silica SiO x , showing a VRH transport within localized states [ 70 , 71 ]. A VRH conduction mechanism is also likely for low-carbon SiOC/C materials.…”
Section: Resultsmentioning
confidence: 99%
“…5). The temperature dependence of resistance seems to follow the model for variable-range hopping (VRH) in 3-dimensions272829303132, however, the calculated localization length and density of electronic states give unrealistic values (see Supplementary Information). Instead, multiphonon hopping (MPH) is assumed to be governing the charge transfer mechanism33.…”
Section: Resultsmentioning
confidence: 99%