2010
DOI: 10.1088/0022-3727/43/31/315402
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Charge transport modelling in electron-beam irradiated dielectrics: a model for polyethylene

Abstract: This paper proposes a numerical model for describing charge accumulation in electron-beam irradiated low density polyethylene. The model is bipolar, and based on a previous model dedicated to space charge accumulation in solid dielectrics under electrical stress. It encompasses the generation of positive and negative charges due to the electron beam and their transport in the insulation. A sensitivity analysis of the model to parameters specific to electron beam irradiation is performed in order to understand … Show more

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Cited by 45 publications
(15 citation statements)
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“…Moreover, the obtained recombination results are comparable with the literature (Le Roy et al , 2004; Doedens et al , 2020), ranging between 5 × 10 −3 and 5 × 10 −2 for fields ranging between 20 and 60 kV/mm.…”
Section: Discussionsupporting
confidence: 87%
See 1 more Smart Citation
“…Moreover, the obtained recombination results are comparable with the literature (Le Roy et al , 2004; Doedens et al , 2020), ranging between 5 × 10 −3 and 5 × 10 −2 for fields ranging between 20 and 60 kV/mm.…”
Section: Discussionsupporting
confidence: 87%
“…In addition to the experimental observations currently available for low-density polyethylene (LDPE), numerical models can significantly help to better understand the dynamic behavior of space charge inside this dielectric. For this purpose, a numerical model has been developed (Le Roy et al , 2004), aiming to describe the mechanisms of charge generation and transport in LDPE under DC stress. The model is based on Poisson’s equation and the conservation law of charges.…”
Section: Introductionmentioning
confidence: 99%
“…Instead of directly setting up the “recombination rate” to describe the charge neutralization process by some researchers, [ 247,252,254 ] Le Roy et al. [ 260 ] defined the recombination rate as a function of the mobility following the Langevin relations [ 261,262 ] Si1i2badbreak=μnormali1+μnormali2ε0εr\[ \begin{array}{*{20}{c}}{{S_{{{\rm{i}}_1} - {{\rm{i}}_2}}} = \frac{{{\mu _{{{\rm{i}}_1}}} + {\mu _{{{\rm{i}}_2}}}}}{{{\varepsilon _0}{\varepsilon _{\rm{r}}}}}}\end{array} \] where S i1‐i2 is the ratio of recombination between two carriers (among free electrons (fe), free holes (fh), trapped electrons (te), and trapped holes (th)). The mobility was set to zero for trapped carriers.…”
Section: Space Charge Simulation: From Macroscale To Microscalementioning
confidence: 99%
“…According to Equation ( 8), the Q tsd increases from 8.52 nC of PEI to 18.6 nC of PEI-BTO_nfs and 50.5 nC of PEI-BNBTO_nfs with 3 vol%, indicating larger trap site density of PEI-BNBTO_nfs nanocomposite. To better visualize the effect of trapping characteristics on the charge transfer process in the nanocomposites, the charge transport characteristics were simulated by the phase-field method based on a bipolar charge transport model [52,53]. Fig.…”
Section: Resultsmentioning
confidence: 99%