Charge transport in mixed metal halide perovskite semiconductors

Senanayak, Satyaprasad P.; Dey, Krishanu; Shivanna, Ravichandran; Li, Weiwei; Ghosh, Dibyajyoti; Zhang, Youcheng; Roose, Bart; Zelewski, Szymon J.; Andaji‐Garmaroudi, Zahra; Wood, William A.; Tiwale, Nikhil; MacManus‐Driscoll, Judith L.; Friend, Richard H.; Stranks, Samuel D.; Sirringhaus, Henning

doi:10.1038/s41563-022-01448-2

Cited by 47 publications

(68 citation statements)

References 51 publications

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“…Therefore, manipulating the carrier dynamics and developing charge-transport materials and interfaces that minimize losses by having energy levels well-aligned to the perovskite, together with no detrimental chemical reactivity, could result in n-i-p cells with efficiencies at least comparable to those in p-i-n cells. Although unbalanced carrier conductivities due to p-doping may limit the photovoltaic performance compared to an intrinsic absorber layer in the same architecture, there are some applications where this could be desirable, for example, transistors. ,, …”

Section: Challenges and Solutions For Tin-containing Perovskite Solar...mentioning

confidence: 99%

“…Considering that the defect formation and material degradation is largely initiated at and dominated by exposed sites, that is, the surfaces and grain boundaries, these locations should take priority when conceiving of passivation strategies. Given the different populations of defects that can form and the tendency for p-type charge transport, , particular attention must be paid to passivating electron traps. This is most critical at the top surface in p-i-n devices where the perovskite/ETL interface is located.…”

Section: Challenges and Solutions For Tin-containing Perovskite Solar...mentioning

confidence: 99%

“…Once the carrier lifetime is sufficiently long, thereafter, efficient extraction is indispensable for realizing efficient cells. Additionally, for Sn-containing PSCs, similar to Pb perovskites, charge carrier extraction will be modulated by mobile ions, which can induce hysteresis effects in photovoltaic device measurements. − These mobile ions can induce instability through a variety of redox reactions discussed earlier, as well as migrating into transport layers such as fullerenes, further altering the interface energetics . Reaching a complete understanding of the effects of mobile ions and the effects they have on device performance requires further study; however, it has been suggested that ion migration may be less severe in mixed Sn–Pb perovskites than neat Pb since the activation energy for ion migration could be relatively higher. , …”

Section: Challenges and Solutions For Tin-containing Perovskite Solar...mentioning

confidence: 99%

“…Although unbalanced carrier conductivities due to p-doping may limit the photovoltaic performance compared to an intrinsic absorber layer in the same architecture, there are some applications where this could be desirable, for example, transistors. 132,139,140 Because p-i-n cells account for the vast majority of highefficiency reports, and for the current advantages outlined above, we mainly focus on a discussion of this architecture. Current reports almost entirely employ Cu (copper) or Ag (silver) as the back contact in this architecture, which is problematic for stability in conjunction with mobile ions, for example, resulting in AgI (silver iodide) formation.…”

Section: Charge Carrier Dynamics and Energy Level Matchingmentioning

confidence: 99%

Section: Challenges and Solutions For Tin-containing Perovskite Solar...mentioning

confidence: 99%

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Prospects for Tin-Containing Halide Perovskite Photovoltaics

Smith

Snaith

et al. 2023

Precision Chemistry

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Tin-containing metal halide perovskites have enormous potential as photovoltaics, both in narrow band gap mixed tin−lead materials for all-perovskite tandems and for lead-free perovskites. The introduction of Sn(II), however, has significant effects on the solution chemistry, crystallization, defect states, and other material properties in halide perovskites. In this perspective, we summarize the main hurdles for tin-containing perovskites and highlight successful attempts made by the community to overcome them. We discuss important research directions for the development of these materials and propose some approaches to achieve a unified understanding of Sn incorporation. We particularly focus on the discussion of charge carrier dynamics and nonradiative losses at the interfaces between perovskite and charge extraction layers in p-i-n cells. We hope these insights will aid the community to accelerate the development of high-performance, stable single-junction tincontaining perovskite solar cells and all-perovskite tandems.

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Section: Challenges and Solutions For Tin-containing Perovskite Solar...mentioning

confidence: 99%

Section: Challenges and Solutions For Tin-containing Perovskite Solar...mentioning

confidence: 99%

Section: Challenges and Solutions For Tin-containing Perovskite Solar...mentioning

confidence: 99%

Section: Charge Carrier Dynamics and Energy Level Matchingmentioning

confidence: 99%

Section: Challenges and Solutions For Tin-containing Perovskite Solar...mentioning

confidence: 99%

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Prospects for Tin-Containing Halide Perovskite Photovoltaics

Smith

Snaith

et al. 2023

Precision Chemistry

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Ambient‐Stable 2D Dion–Jacobson Phase Tin Halide Perovskite Field‐Effect Transistors with Mobility over 1.6 Cm² V⁻¹ s⁻¹

Qiu,

Xia,

Liu

et al. 2023

Advanced Materials

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Solution‐processed metal halide perovskites hold immense potential for the advancement of next‐generation field‐effect transistors (FETs). However, the instability of perovskite‐based transistors has impeded their progress and practical applications. Here, ambient‐stable high‐performance FETs based on 2D Dion–Jacobson phase tin halide perovskite BDASnI4, which has high film quality and excellent electrical properties, are reported. The perovskite channels are established by engineering the film crystallization process via the employment of ammonium salt interlayers and the incorporation of NH4SCN additives within the precursor solution. The refined FETs demonstrate field‐effect hole mobilities up to 1.61 cm2 V−1 s−1 and an on/off ratio surpassing 106. Moreover, the devices show impressive operational and environmental stability and retain their functional performance even after being exposed to ambient conditions with a temperature of 45 °C and humidity of 45% for over 150 h.

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Enhancing Light Outcoupling Efficiency via Anisotropic Low Refractive Index Electron Transporting Materials for Efficient Perovskite Light‐Emitting Diodes

Sun,

Tai,

et al. 2024

Advanced Materials

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Thanks to the extensive efforts toward optimizing perovskite crystallization properties, high‐quality perovskite films with near‐unity photoluminescence quantum yield have been successfully achieved. However, the light outcoupling efficiency of perovskite light‐emitting diodes (PeLEDs) is impeded by insufficient light extraction, which poses a challenge to the further advancement of PeLEDs. Here, an anisotropic multifunctional electron transporting material, 9,10‐bis(4‐(2‐phenyl‐1H‐benzo[d]imidazole‐1‐yl)phenyl) anthracene (BPBiPA), with a low extraordinary refractive index (ne) and high electron mobility is developed for fabricating high‐efficiency PeLEDs. The anisotropic molecular orientations of BPBiPA can result in a low ne of 1.59 along the z‐axis direction. Optical simulations show that the low ne of BPBiPA can effectively mitigate the surface plasmon polariton loss and enhance the photon extraction efficiency in waveguide mode, thereby improving the light outcoupling efficiency of PeLEDs. Additionally, the high electron mobility of BPBiPA can facilitate balanced carrier injection in PeLEDs. As a result, high‐efficiency green PeLEDs with a record external quantum efficiency of 32.1% and a current efficiency of 111.7 cd A−1 are obtained, which provides new inspirations for the design of electron transporting materials for high‐performance PeLEDs.This article is protected by copyright. All rights reserved

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Charge transport in mixed metal halide perovskite semiconductors

Cited by 47 publications

References 51 publications

Prospects for Tin-Containing Halide Perovskite Photovoltaics

Prospects for Tin-Containing Halide Perovskite Photovoltaics

Ambient‐Stable 2D Dion–Jacobson Phase Tin Halide Perovskite Field‐Effect Transistors with Mobility over 1.6 Cm² V⁻¹ s⁻¹

Enhancing Light Outcoupling Efficiency via Anisotropic Low Refractive Index Electron Transporting Materials for Efficient Perovskite Light‐Emitting Diodes

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Charge transport in mixed metal halide perovskite semiconductors

Cited by 47 publications

References 51 publications

Prospects for Tin-Containing Halide Perovskite Photovoltaics

Prospects for Tin-Containing Halide Perovskite Photovoltaics

Ambient‐Stable 2D Dion–Jacobson Phase Tin Halide Perovskite Field‐Effect Transistors with Mobility over 1.6 Cm2 V−1 s−1

Enhancing Light Outcoupling Efficiency via Anisotropic Low Refractive Index Electron Transporting Materials for Efficient Perovskite Light‐Emitting Diodes

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Product

Resources

About

Ambient‐Stable 2D Dion–Jacobson Phase Tin Halide Perovskite Field‐Effect Transistors with Mobility over 1.6 Cm² V⁻¹ s⁻¹