Ambient‐Stable 2D Dion–Jacobson Phase Tin Halide Perovskite Field‐Effect Transistors with Mobility over 1.6 Cm² V⁻¹ s⁻¹

Abstract

Solution‐processed metal halide perovskites hold immense potential for the advancement of next‐generation field‐effect transistors (FETs). However, the instability of perovskite‐based transistors has impeded their progress and practical applications. Here, ambient‐stable high‐performance FETs based on 2D Dion–Jacobson phase tin halide perovskite BDASnI4, which has high film quality and excellent electrical properties, are reported. The perovskite channels are established by engineering the film crystallization process via the employment of ammonium salt interlayers and the incorporation of NH4SCN additives within the precursor solution. The refined FETs demonstrate field‐effect hole mobilities up to 1.61 cm2 V−1 s−1 and an on/off ratio surpassing 106. Moreover, the devices show impressive operational and environmental stability and retain their functional performance even after being exposed to ambient conditions with a temperature of 45 °C and humidity of 45% for over 150 h.

[NH3(CH2)4NH3]SnX4 (X = Br, I): Dion–Jacobson type 2-D perovskites with short interlayer spacing

“…The N⋯N distance is the minimum in the case of (1,4-BDA)SnBr 6 and the maximum in (1,4-BDA)SnI 4 . We also note that the interlayer gaps for (1,4-BDA)SnBr 4 (9.549 Å) and (1,4-BDA)SnI 4 (10.183 Å) are slightly different from those reported based on thin film powder X-ray diffraction studies, which are 10.0 Å 27 and 9.7 Å, 28 respectively, wherein the 1,4-BDA conformation was assumed to be all- anti . However, these miniscule differences are common between the bulk and thin film X-ray data due to the differences in sample crystallinity, substrate induced strain and compositional gradient.…”

“…32,43 Furthermore, the bandgap and the emission band positions of (1,4-BDA)SnI 4 are slightly red-shifted when compared with the values reported for thin films. 28,40 We have also observed spectral broadening of the PL spectra of (1,4-BDA)SnI 4 , probably due to defects created during solvent based hydrothermal synthesis. 44…”

“…The 0D bromide has not been prepared before to the best of our knowledge, while the 2D bromide and iodide have been reported as thin films, revealing exciting optoelectronic properties, but there were no structural characterizations. 27,28 We have determined the structures of all three compounds from their single-crystal X-ray diffraction (SCXRD) data. Tables S2–S4† list the unit cell constants and other information about the structural refinement and Table S5† lists the key bond lengths and bond angles.…”

Unveiling the role of linear alkyl organic cations in 2D layered tin halide perovskite field-effect transistors

“…The strong coordination ability of DMSO is expected to reduce the nucleation rate of perovskite crystals due to the presence of pre-nucleation. 13 The boiling point is another key parameter to determine the evaporation rate of the solvent and should be considered when mixing with DFM. It is generally believed that polar DMSO with high boiling point of 189 °C is less volatile and can readily remain in the perovskite film even after thermal annealing.…”

“…Field-effect transistors (FETs) provide a versatile platform to investigate the charge carrier transport of perovskite semiconductors. 12,13 Recent studies have shown that chemical tuning of organic cations offers a simple but effective way to modulate the device performance of 2D perovskite optoelectronics. 14,15 Based on the rapid development of perovskite solar cells by molecular engineering of the spacer cations, the wide compositional space for organic ligands potentially serves as an effective tool to fine tune the charge transport properties in FET devices.…”