Charge Transport by the Ion Shunt Effect

Knudson, A.R.; Campbell, A.B.; Hauser, John R.; Jessee, M.; Stapor, W.J.; Shapiro, P.

doi:10.1109/tns.1986.4334641

Cited by 43 publications

(17 citation statements)

References 8 publications

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“…The study of charge collection in more complex structures [4,5,6] has revealed a new phenomenon called the ion shunt effect. This effect involves the transfer of charge between two regions of like conductivity type which are at different potentials and are linked by the electron-hole plasma wire produced by an energetic ion.…”

Section: Introductionmentioning

confidence: 99%

Charge Collection in Bipolar Transistors

Knudson

Campbell

1987

IEEE Trans. Nucl. Sci.

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Charge collection measurements on bipolar test structures have shown the presence of a charge transfer process, that has been referred to as the ion shunt effect. This process had been previously seen in CMOS test structures. The transfer of charge from the emitter to the collector has been demonstrated to be a localized effect requiring that the ion track pass through both the emitter and collector. Measurements performed on transistors with and without a buried oxide layer showed large differences in charge collection.

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Section: Introductionmentioning

confidence: 99%

Charge Collection in Bipolar Transistors

Knudson

Campbell

1987

IEEE Trans. Nucl. Sci.

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“…Minority-canier charge can be amplified resulting in a significantly enhanced charge collection [10,11]. A shunt effect [12,13] connecting the high potential n-epdsubstrate region to the low potential n-source could also explain the enhanced charge collection in this region. In Figure la, the largest charge collection occurs in the center of struck n+ and p+ junctions, contrary to earlier observations by McNulty [7] that there was enhanced collection at junction edges'.…”

Section: Ibicc Analysismentioning

confidence: 99%

Relationship between IBICC imaging and SEU in CMOS ICs

Sexton

Horn

Doyle

et al. 1993

IEEE Trans. Nucl. Sci.

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Ion-beam-induced charge-collection imaging (IBICC) has been used to study the SEU mechanisms of the Sandia TA670 16K-bit SRAM. Quantitative charge-collection spectra from known regions of the memory cell have been derived with this technique. For 2.4-MeV He ions at normal incidence, charge collection depth for a reverse-biased p+ drain strike is estimated to be 4.8k0.4 pm. Heavy-ion strikes to the reverse-biased p-well result in nearly complete collection of deposited charge to a depth of 5.5k0.5 pm. A charge amplification effect in the n-on drain is identified and is due to either bipolar amplification or a shunt effect in the parasitic vertical npn bipolar transistor associated with the n+/n-substrate, p-well, and n+ drain. This effect is present only when the n+ drain is at OV bias. When coupled with previous SEU-imaging, these results strongly suggest that the dominant SEU mechanism in this SRAM is a heavy-ion strike to the n-on transistor drain.

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“…The ion-shunt mechanism can also initiate parasitic bipolar action within device multilayers [99,100], thereby amplifying the charge transferred between devices. The traditional measures of sensitivity and vulnerability do not address the ion shunt met.hanism and should therefore not be applied to device containing trenched active regions or multilayers which include sensitive nodes.…”

Section: Applicability Of Definitions To New Technologiesmentioning

confidence: 99%

“…The second is the longer time associated with the diffusion of carriers to the junction depletion region. This simple picture is complicated when the carrier density exceeds the background doping density and the depletion region is greatly distorted leading to the funneling effect [135][136][137][138][139] with single junctions and an ion shunt-like effect across multiple junctions [140][141][142].…”

Section: Basic Seu Processes In Bipolar Devicesmentioning

confidence: 99%