Charge transfer and recombination kinetics at photoelectrodes

Schefold, J.; Kühne, H.

doi:10.1016/0022-0728(91)85396-7

Cited by 25 publications

(3 citation statements)

References 45 publications

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“…According to the above qualitative analysis, the experimental responses will be discussed in comparison with the equivalent circuit of Figure , which is similar to circuits suggested by other workers: − R el represents the uncompensated electrolyte resistance, R sc and C sc are the resistance and capacitance of the space charge region, C d is the double layer capacitance, and Z F is the faradic impedance of the dissolution passivation process, which reduces to R t at sufficiently high frequency. The path marked J ph indicates that under illumination the R sc element is shunted.…”

Section: Resultsmentioning

confidence: 77%

Electrodissolution and Passivation of Silicon in Aqueous Alkaline Media: A Voltammetric and Impedance Investigation

Cattarin

Musiani

1999

J. Phys. Chem. B

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The behavior of Si electrodes in aqueous alkaline media has been investigated by voltammetric and impedance techniques. The flatband potential has been estimated on the basis of Mott−Schottky plots and photocurrent onset as E FB = −1.15 V (SCE) for n-Si and E FB = −0.45 V(SCE) for p-Si. A dissolution/passivation mechanism is proposed, assuming: (1) irreversible electrochemical oxidation of H-terminated Si to a monohydroxylated surface species, which may undergo either (2) irreversible electrochemical oxidation to a dihydroxylated species responsible of 2D surface blocking or (3) chemical dissolution as Si(II) regenerating an H-terminated surface; furthermore, (4) the blocking species may be dissolved chemically as Si(IV); (5) a chemical reaction with water generating monohydroxilated Si (and H2) is also considered. A kinetic model is developed for the case of n-Si, assuming Helmholtz-layer control. The model reproduces the essential experimental features of both J − E curves and impedance diagrams in the active dissolution and passivation regions but is not expected to be realistic in the passive region where 3D surface blocking should be considered.

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Section: Resultsmentioning

confidence: 77%

Electrodissolution and Passivation of Silicon in Aqueous Alkaline Media: A Voltammetric and Impedance Investigation

Cattarin

Musiani

1999

J. Phys. Chem. B

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“…Ref. 8,12,16). According to the generation equation, idea] generation holds for ~ L: >> 1, where L~ is the minority carrier diffusion length (L~ = 4 ~m 2~) and ~ the absorption coefficient.…”

Section: Discussionmentioning

confidence: 99%

“…Indium layers, formed under H2 evolution at bare InP in a cathodic corrosion process, yield large C~H values easily detected with impedance, a decrease of the saturation photocurrent density, or In oxidation transients in the j/U curves. 8 [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17] In at the interface would obviously not be compatible with small CT rates. However, since In is formed under current flow for higher diffusion overpotenrials even at p-InP(Ag), corrosion also occurs in V 3 § + HC1 at a potential below the most negative U~edox used in the experiments (-500 mV/SCE).…”

Section: Electrochemical Charge-transfermentioning

confidence: 99%

Charge Transfer at Photoelectrochemical Solar Cells: Conclusions from the Open‐Circuit Impedance of p ‐ InP in V 3 + / 2 +

Schefold¹

1995

J. Electrochem. Soc.

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Two resistance-capacitance (RC! time constants are detectable in the open-circuit impedance of illuminated (bare and Ag-treated) p-InP in contact with V 3/2+ + HC1 solution. The dependence of the time constants on illumination intensity and concentration of V 3+ and V 2 § is used to identify processes related to recombination and electrochemical charge transfer, respectively. Charge transfer (CT) rates at metal-treated electrodes [p-InP(Ag)] turn out to be somewhat smaller than at metallic Ag electrodes. For 0.3M V 3 §247 CT at p-InP(Ag) is sufficiently fast for solar cell operation under solar irradiation intensities (exchange current density io = 40 mA cm-e). CT at bare p-InP is much slower (io = 0.2 to 2 mAcm 2). Impedance data are fitted with two transformable equivalent circuits (differential models) which both yield similar values for recombination and CT elements. Thereby charging/discharging processes at the interface can be attributed either to a charging/ discharging of the differential Helmholtz capacity Cm~ or an interfacial defect capacity. Measured values for either element -~ -2 are equal or smaller than the CHH value of bulk metal electrodes [about 2 to 20 ~F cm " at pInP(Ag), < i ~F cm at bare p-InP].

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Implementation of Multijunction Solar Cells in Integrated Devices for the Generation of Solar Fuels

Smirnov¹,

Welter²,

Finger³

et al. 2018

Photoelectrochemical Solar Cells

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Charge transfer and recombination kinetics at photoelectrodes

Cited by 25 publications

References 45 publications

Electrodissolution and Passivation of Silicon in Aqueous Alkaline Media: A Voltammetric and Impedance Investigation

Electrodissolution and Passivation of Silicon in Aqueous Alkaline Media: A Voltammetric and Impedance Investigation

Charge Transfer at Photoelectrochemical Solar Cells: Conclusions from the Open‐Circuit Impedance of p ‐ InP in V 3 + / 2 +

Implementation of Multijunction Solar Cells in Integrated Devices for the Generation of Solar Fuels

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