Charge storage impact on input capacitance in p-GaN gate AlGaN/GaN power high-electron-mobility transistors

Wang, Fangzhou; Chen, Wanjun; Li, Xuan; Sun, Ruize; Xu, Xiaorui; Xin, Yajie; Wang, Zeheng; Shi, Yijun; Xia, Yun; Liu, Chao; Zhou, Jianjun; Zhou, Qi; Zhang, Bo

doi:10.1088/1361-6463/ab86e7

Cited by 19 publications

(10 citation statements)

References 45 publications

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“…It should be noted that fully ionized p-GaN doping is utilized in this work. The feasibility of this simplification has been well confirmed in [14] and our previous work [32].…”

Section: Analytical Model Considering the Trapssupporting

confidence: 66%

An analytical model on the gate control capability in p-GaN Gate AlGaN/GaN high-electron-mobility transistors considering buffer acceptor traps

Wang

Chen

Sun

et al. 2020

J. Phys. D: Appl. Phys.

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An analytical model considering the buffer acceptor traps is presented in this paper to study the gate control capability in p-GaN gate AlGaN/GaN high-electron-mobility transistors (HEMTs). Through applying Gauss’ law from the buffer layer to the two-dimensional-electron-gas (2DEG) channel in the GaN channel layer, the contributions of buffer acceptor trap concentration (N A) and energy level (E T) are obtained for calculating the gate voltage (V G) dependent 2DEG density (n S) and threshold voltage (V TH) performance. It is suggested that the deep E T acceptor traps in the buffer layer are of great importance to the gate control capability. Plenty of the deep E T acceptor traps could be ionized at the top region of the buffer layer. These ionized acceptor traps are negatively charged and electrostatically influence the 2DEG density, which is the role of deep E T on gate control. Then, the n S-V G and V TH characteristics of the devices could be significantly modulated by the N A. Furthermore, the influence of the shallow E T acceptor traps is not strong and could be ignored in the prediction of the n S-V G and V TH distributions. This is due to the fact that few shallow E T acceptor traps are ionized in the buffer layer. The analytical results are well supported by the calibrated TCAD simulation, revealing the impact mechanism of buffer acceptor traps on the device gate control capability and serving as more accurate guidance for designing the n S-V G and V TH in p-GaN gate AlGaN/GaN HEMTs.

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“…It should be noted that fully ionized p-GaN doping is utilized in this work. The feasibility of this simplification has been well confirmed in [14] and our previous work [32].…”

Section: Analytical Model Considering the Trapssupporting

confidence: 66%

An analytical model on the gate control capability in p-GaN Gate AlGaN/GaN high-electron-mobility transistors considering buffer acceptor traps

Wang

Chen

Sun

et al. 2020

J. Phys. D: Appl. Phys.

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“…DT1Nitride/AlGaN trap density 3 × 10 13 cm −2 (E C − 0.4 eV)[24] N DTC Channel UID concentration 1 × 10 15 cm −3…”

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confidence: 99%

Improving Breakdown Voltage and Threshold Voltage Stability by Clamping Channel Potential for Short-Channel Power p-GaN HEMTs

et al. 2022

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This paper proposes a novel p-GaN HEMT (P-HEMT) by clamping channel potential to improve breakdown voltage (BV) and threshold voltage (VTH) stability. The clamping channel potential for P-HEMT is achieved by a partially-recessed p-GaN layer (PR p-GaN layer). At high drain bias, the two-dimensional electron gas (2DEG) channel under the PR p-GaN layer is depleted to withstand the drain bias. Therefore, the channel potential at the drain-side of the p-GaN layer is clamped to improve BV and VTH stability. Compared with the conventional p-GaN HEMT (C-HEMT), simulation results show that the BV is improved by 120%, and the VTH stability induced by high drain bias is increased by 490% for the same on-resistance. In addition, the influence of the PR p-GaN layers’ length, thickness, doping density on BV and VTH stability is analyzed. The proposed device can be a good reference to improve breakdown voltage and threshold voltage stability for short-channel power p-GaN HEMTs.

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“…Considering the polarization compensation or enhancement that comes from other mechanisms (e.g., affinity offset and Schottky barrier depletion), the net polarization charge density regarding the mole fraction x of the element A, which is assumed to equal the 2DEG or 2DHG density n(x) , can be abbreviately depicted by [25,27,28]:…”

Section: Net Polarization Chargesmentioning

confidence: 99%

Two-dimensional polarization doping of GaN heterojunction and its potential for realizing lateral p–n junction devices

Wang

2022

Appl. Phys. A

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In the gallium nitride (GaN) commercial applications such as high-power illumination and portable charging station, bipolar devices are highly demanded because of their superior power transfer capability. Also, in other scenarios of the monolithic integration where high electron mobility transistors (HEMTs) or superlattice-based devices are presented, the peripheral components are preferred to be lateral. However, to realize such a lateral bipolar junction in GaN, high-concentration p-type dopant doping is still challenging and hardly compatible with the HEMT integration. In this work, we proposed a novel strategy to form lateral bipolar GaN p–n junctions, enabled by the two-dimensional polarization doping. The theory and the simulation reveal this strategy features inspiring forwarding, blocking, and switching performance. Given the recent success of the GaN selective area regrowth techniques, the proposed lateral bipolar junction is highly promising in monolithic heterojunction integration in the future.

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Charge storage impact on input capacitance in p-GaN gate AlGaN/GaN power high-electron-mobility transistors

Cited by 19 publications

References 45 publications

An analytical model on the gate control capability in p-GaN Gate AlGaN/GaN high-electron-mobility transistors considering buffer acceptor traps

An analytical model on the gate control capability in p-GaN Gate AlGaN/GaN high-electron-mobility transistors considering buffer acceptor traps

Improving Breakdown Voltage and Threshold Voltage Stability by Clamping Channel Potential for Short-Channel Power p-GaN HEMTs

Two-dimensional polarization doping of GaN heterojunction and its potential for realizing lateral p–n junction devices

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