Charge storage characteristics of nonvolatile memories with chemically-synthesized and vacuum-deposited gold nanoparticles

Wang, Jer‐Chyi; Liao, Chin-Hsiang; Lin, Chih-Min; Chang, Ruey-Dar; Chang, Li-Chun; Wu, Chih-I; Chang, Jow‐Ran

doi:10.1016/j.cap.2015.02.010

Cited by 4 publications

(2 citation statements)

References 22 publications

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“…The photoemission threshold ( E s ) was evaluated by a linear fit of the beginning of the right defined by the secondary electron peak. Thus, the energy from the valence band to vacuum level ( E vac_vb ) can be calculated by the following equation [ 33 ]:

where hν is the incident He. Thus, the E vac_vb of the SiO 2 films with and without the CF 4 plasma treatment was determined to be 9.13 and 9.35 eV, respectively, indicating a light increase in the E vac_vb of the SiO 2 films with the treatment.…”

Section: Resultsmentioning

confidence: 99%

Data Retention Characterization of Gate-Injected Gold-Nanoparticle Non-Volatile Memory with Low-Damage CF4-Plasma-Treated Blocking Oxide Layer

et al. 2017

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Gold-nanoparticle (Au-NP) non-volatile memories (NVMs) with low-damage CF4 plasma treatment on the blocking oxide (BO) layer have been investigated to present the gate injection of the holes. These holes, injected from the Al gate with the positive gate bias, were explained by the bandgap engineering of the gradually-fluorinated BO layer and the effective work function modulation of the Al gate. The Si–F complex in the BO layer was analyzed by X-ray photoelectron spectroscopy (XPS), while the depth of fluorine incorporation was verified using a secondary ion mass spectrometer (SIMS). In addition, the valence band modification of the fluorinated BO layer was examined by ultraviolet photoelectron spectroscopy (UPS) to support the bandgap engineering. The reactive power of the CF4 plasma treatment on the BO layer was modified to increase the electric field of the BO layer and raise the effective work function of the Al gate, leading to the hole-injection from the gate. The injected holes are trapped at the interface between the gold-nanoparticles (Au-NPs) and the tunneling oxide (TO) layer, resulting in superior data retention properties such as an extremely low charge loss of 5.7% at 104 s and a nearly negligible increase in charge loss at 85 °C of the CF4-plasma-treated Au-NP NVMs, which can be applied in highly reliable consumer electronics.

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Section: Resultsmentioning

confidence: 99%

Data Retention Characterization of Gate-Injected Gold-Nanoparticle Non-Volatile Memory with Low-Damage CF4-Plasma-Treated Blocking Oxide Layer

et al. 2017

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“…Even if high-k related tunneling oxide studies were carried on to get better retention performance, it has been stated that using the isolated floating nanoparticles instead of the single FG layer is a promising method because of the higher defect densities of high-k materials [19,20] . The FG memory devices based on Au NPs with different sizes and distributions have already been reported to accomplish the above-mentioned problems [19,[21][22][23][24]. Vinod et al observed 10 −8 A leakage current with 1×10 11 cm −2 Au NPs density, while Kim et al reported 10 −9 A with 1.73×10 12 cm −2 Au NPs density [23,25].…”

Section: Introductionmentioning

confidence: 99%

Well-ordered nanoparticle arrays for floating gate memory applications

Kuruoğlu¹,

Çalışkan²,

Serin³

et al. 2020

Nanotechnology

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A non-volatile floating gate memory device containing well-ordered Au nanoparticles (NPs) is fabricated as a metal–oxide–semiconductor capacitor structure. With superior control on the size, shape and position of nanoparticles, the presented nano-floating gate memory (NFGM) device possesses almost perfect precision of device geometry. The well-ordered Au NPs embedded within the memory device exhibit large memory window at low operation voltages (8.8V @ ± 15V), fast operation time (<10−4 s) and good retention (up to 107 s). In this work, the structural properties of the NFGM device are correlated with the examined electrical properties. The current results are compared with the other studies in the literature to emphasis the advantages of the precise ordering and geometry of the NPs.

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Fluorescent gold clusters for specific detection of SARS-CoV-2 nucleoprotein via fluorescence and electrochemical method

Chellasamy,

Arumugasamy,

Rajagopalan

et al. 2023

Applied Surface Science

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Charge storage characteristics of nonvolatile memories with chemically-synthesized and vacuum-deposited gold nanoparticles

Cited by 4 publications

References 22 publications

Data Retention Characterization of Gate-Injected Gold-Nanoparticle Non-Volatile Memory with Low-Damage CF4-Plasma-Treated Blocking Oxide Layer

Data Retention Characterization of Gate-Injected Gold-Nanoparticle Non-Volatile Memory with Low-Damage CF4-Plasma-Treated Blocking Oxide Layer

Well-ordered nanoparticle arrays for floating gate memory applications

Fluorescent gold clusters for specific detection of SARS-CoV-2 nucleoprotein via fluorescence and electrochemical method

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