1977
DOI: 10.1088/0022-3727/10/16/017
|View full text |Cite
|
Sign up to set email alerts
|

Charge storage and the effect of ultraviolet radiation on aluminium oxide films

Abstract: Charge storage and the effects of ultraviolet radiation on aluminium oxide films have been studied using the Kelvin probe technique. Freshly anodized films are found to contain a negative surface charge which decays to a steady state value independent of oxide thickness. This negative surface charge can be removed by irradiation with ultraviolet radiation thus assisting the process of electron emission. These results would indicate that the UV radiation from an arc plays a positive role in the arc root initiat… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
3
0

Year Published

1977
1977
2011
2011

Publication Types

Select...
6

Relationship

2
4

Authors

Journals

citations
Cited by 6 publications
(3 citation statements)
references
References 9 publications
0
3
0
Order By: Relevance
“…6) with time constants 78 and 650 seconds compared with 5 and 120 seconds reported in that work. The slower discharge time may arise because the native oxide layer on our aluminium trap was thicker or less conductive than that on the copper trap in [11] and could support a longer relaxation time for any charges on it [12].…”
Section: Charging Effectsmentioning
confidence: 98%
“…6) with time constants 78 and 650 seconds compared with 5 and 120 seconds reported in that work. The slower discharge time may arise because the native oxide layer on our aluminium trap was thicker or less conductive than that on the copper trap in [11] and could support a longer relaxation time for any charges on it [12].…”
Section: Charging Effectsmentioning
confidence: 98%
“…The initial traps are fabricated using aluminum metal, a common VLSI material with low resistivity. A thermal oxide forms at the Al surface which is known to charge upon UV irradiation [17]. If this were to degrade the trap performance, a W or Ti/W layer of the order of 60 µm thick could be deposited on top of the Al electrodes in order to improve the metal surface for ion trapping (tungsten has been used successfully for previous micron scale ion traps [18]); however, this was not attempted in the early experiments described here.…”
Section: Trap Design Fabrication and Packagingmentioning
confidence: 99%
“…After 5-10 min of operation, during which the output level decreased considerably, a more stable regime was obtained. Although the measured input power also decreased with time, the decrease in output power was faster, probably due to changes in discharge properties [2] and to electrode effects [3]. Apparently, the discharge was perturbed by impurities.…”
mentioning
confidence: 99%