Charge state effect on near-surface damage formation in swift heavy ion irradiated InP

Abstract

Amorphization and recrystallization of yttrium iron garnet under swift heavy ion beamsIn situ analysis of Si(100) surface damage induced by low-energy rare-gas ion bombardment using x-ray photoelectron spectroscopy

Swift heavy ion induced structural evolution in InP

“…[6] r sim (ε e ) (nm) Ref. [6] r sim (ε e ) (nm) (our result) threshold regime, nuclear energy deposition i.e, ε n plays an important role in structural modification of the target [28]. We have applied our unified TSM to estimate the lattice temperature for 64 MeV Au and 82 MeV Xe irradiated InP and compared the simulated results with the experimental observations reported by Kamarou et al in Ref.…”

“…However, in all these cases, the value of ε e is greater than its threshold value for the melting of the target materials. If the value of the same is just below the threshold value, the effect of ε n may play a critical role in modifying the lattice structure [19,28]. Moreover, if there is melting in the system, it is necessary to take into account the effect of latent heat of fusion in the simulation to study the dynamics of phase transformation.…”

“…Lattice strain on ion-irradiation is the consequence of the formation of point defects, like vacancies and interstitials [48]. The formation of point defect clusters near the surface region (while the bulk inside is heavily damaged) had been observed for 250 MeV Xe ion irradiation in InP using cross-section transmission electron microscope (TEM) measurements [4,10,28]. Not only for MeV irradiation, the appearance of the reduced damaged surface layer has also been observed in InP, irradiated by ions in keV energy range [49].…”

Dense and nanometric electronic excitations induced by swift heavy ions in an ionic CaF2crystal: Evidence for two thresholds of damage creation

“…Deviations from the known energy loss 94 at or just below the sample surface were thus avoided. 95,96 The stripper foils also served as an ion-flux monitor system by continuously recording the electrical current due to electron emission calibrated by a downstream Faraday cup. 97 The irradiation were performed at room temperature, and in order to minimize sample heating the ion flux was limited to values between 3 × 10 8 and 10 9 ions/cm 2 /s, depending on the ion species.…”

Nonlinear behavior of microwave semiconductor materials measured under a strong electromagnetic environment using a compressed rectangular resonant cavity

“…Existing studies demonstrate that heavy ion irradiation can change the structure of the material [22,23], which may affect the physical properties of the material [24][25][26]. The radiation characteristics of InP has been explored [27][28][29][30][31][32]. However, these researches mainly focus on experiment, which lacks theoretical explanation.…”