Charge sensitivity simulation on a double barrier GaAs/InGaAs/InAs quantum dot-in-well hybrid structure photodetector

Wang, W. W.; Wang, M. J.; Jin, Xiaobo; Guo, Fangmin; Li, Y. Q.

doi:10.1007/s11082-014-0111-0

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2015

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“…The device structure was imported into the Crosslight Apsys [19]. More simulation details are given in [20].…”

Section: Simulationmentioning

confidence: 99%

Charge character in the double‐barrier quantum dots in well hybrid structure

Ning

Wang

Jin

et al. 2015

Micro & Nano Letters

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The charge character in the double-barrier quantum dots (QDs) in a well hybrid structure is investigated experimentally and numerically. The capacitance hysteresis phenomenon of a double-barrier InAs QDs and InGaAs quantum well hybrid structure is reported, as well as the carrier transport properties in the photoelectric device. Due to the coupling effect among multiple QDs, the photoelectric device's measured I-V and C-V curves show that the capacitance changes with the light intensity. When the dumping readout designed, it can enhance the sensitivity of the device at weak light illumination. This indicates that the photoelectric device has the potential to be a promising candidate both in quantum information applications and highly sensitive imaging applications.

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“…The device structure was imported into the Crosslight Apsys [19]. More simulation details are given in [20].…”

Section: Simulationmentioning

confidence: 99%