Charge character in the double‐barrier quantum dots in well hybrid structure

Abstract

The charge character in the double-barrier quantum dots (QDs) in a well hybrid structure is investigated experimentally and numerically. The capacitance hysteresis phenomenon of a double-barrier InAs QDs and InGaAs quantum well hybrid structure is reported, as well as the carrier transport properties in the photoelectric device. Due to the coupling effect among multiple QDs, the photoelectric device's measured I-V and C-V curves show that the capacitance changes with the light intensity. When the dumping readout designed, it can enhance the sensitivity of the device at weak light illumination. This indicates that the photoelectric device has the potential to be a promising candidate both in quantum information applications and highly sensitive imaging applications.

PL of low‐density InAs/GaAs quantum dots with different bimodal populations

“…1. Introduction: Semiconductor indium arsenide (InAs)/gallium arsenide (GaAs) self-assembled quantum dots (QDs) grown via the Stranski-Krastanow (S-K) growth mode are the subject of increasing interest based on their enormous potential for versatile optoelectronic devices including, for example: photovoltaics, light emitters, photodetectors, and optical modulators [1][2][3][4][5][6][7]. The predicted performance improvements of InAs/GaAs QD optoelectronic devices are mainly attributed to the strong threedimensional confinement of carriers and the delta-function-like density of states.…”