Charge Loss Induced by Defects of Transition Layer in Charge-Trap 3D NAND Flash Memory

Wang, Fei; Li, Yuan; Ma, Xiaolei; Chen, Jiezhi

doi:10.1109/access.2021.3067930

Cited by 5 publications

(2 citation statements)

References 47 publications

(49 reference statements)

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“…It has been known that hydrogen contents introduced into the SiN films through the fabrication process and generate traps with shallow energy levels near at nitrogen vacancies. [19][20][21] Furthermore, during the tungsten word line process using WF 6 gas, fluorine atoms penetrate SiN films. These fluorine atoms also lead to an increase in traps with shallower energy levels.…”

Section: Introductionmentioning

confidence: 99%

Impact of hydrogen plasma treatment on fluorine-contained silicon nitride films

Kobayashi,

Omata,

Nakagawa

et al. 2024

Jpn. J. Appl. Phys.

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It has been suggested that the trap energy level in Silicon nitride (SiN) films becomes shallow due to hydrogen and fluorine incorporation, which causes a charge migration in the MONOS memory cells and deteriorates the data retention characteristics. To solve these issues, we have proposed the hydrogen plasma treatment and demonstrated the reduction of the shallow trap density consequent to the removal of hydrogen from SiN films. In this study, the hydrogen plasma treatment is applied to the fluorine-contained SiN films. The results show that deepening of the trap energy level contributing to hole current, decreasing of the shallow trap density contributing to charging and the fluorine concentration near at the SiN surface. These results are regarded to be due to the removal of fluorine in the SiN film through the reaction with hydrogen radicals (H*) during the hydrogen plasma treatment.

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Section: Introductionmentioning

confidence: 99%

Impact of hydrogen plasma treatment on fluorine-contained silicon nitride films

Kobayashi,

Omata,

Nakagawa

et al. 2024

Jpn. J. Appl. Phys.

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“…Lateral charge spreading is caused by the electric field [15][16] from charges in WL spaces and adjacent cells. Charge loss has a greater impact on 3D NAND flash memory as it is scaled down, and there is a steady stream of research about this [17][18][19][20][21][22]. In this work, we propose a new structure of 3D NAND CTF with thin doping in the SiN layer (CTL) between WL spaces using high SiN/SiO2 etching selectivity [23].…”

Section: Introductionmentioning

confidence: 99%

Improvement of Retention Characteristics Using Doped SiN Layer Between WL Spaces in 3D NAND Flash

Kyung,

Suh,

Jung

et al. 2024

IEEE Access

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We propose a novel structure of a charge trapping layer, that is doped between Word Line(WL) spaces in 3D NAND flash memory. To estimate the retention characteristics, the ∆Vth of each structure by doping type is compared to a reference structure during retention operation. In this study, lateral charge spreading, rather than vertical loss, is mainly studied as an indicator to determine how long stored data can survive on the selected cell. When the SiN layer is doped with p-type, the electrostatic potential decreases and SRH recombination increases in the doping region. As a result, the p-type doping structure has better retention characteristics than others. In addition, for an optimized structure between retention characteristics and cell current, the doping region of the SiN layer is split and analyzed by the thickness of the doping region. Since the p-type doping region is thicker, lateral spreading is effectively blocked although the cell current decreased slightly.

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