Charge injection and trapping in TiO2 nanoparticles decorated silicon nanowires arrays

Rasool, Kamran; Rafiq, M. A.; Ahmad, Mushtaq; Imran, Zahid; Batool, S. S.; Nazir, Adnan; Durrani, Z. A. K.; Hasan, Md. Kamrul

doi:10.1063/1.4908569

Cited by 6 publications

(3 citation statements)

References 39 publications

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“…The invariant nature of temperature dependence of current density at 0.4 V, as illustrated in figure 6(b), further confirms the V c to be 0.4 V. The trap density H t for the NW's was determined to be ∼7×10 14 cm −3 using simple substitution of values in equation (3). This value of trap density for NW device is lower to those reported in other III-V NW's [19,29,32,33].…”

Section: Resultscontrasting

confidence: 63%

Space charge limited conduction mechanism in GaAsSb nanowires and the effect of in situ annealing in ultra-high vacuum

Parakh¹,

Johnson²,

Pokharel³

et al. 2019

Nanotechnology

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In this work, the first observation of the space charge limited conduction mechanism (SCLC) in GaAsSb nanowires (NWs) grown by Ga-assisted molecular beam epitaxial technique, and the effect of ultra-high vacuum in situ annealing have been investigated. The low onset voltage of the SCLC in the NW configuration has been advantageously exploited to extract trap density and trap distribution in the bandgap of this material system, using simple temperature dependent current–voltage measurements in both the ensemble and single nanowires. In situ annealing in ultra-high vacuum revealed significant reduction in the trap density from 1016 cm−3 in as-grown NWs to a low level of 7 × 1014 cm−3 and confining wider trap distribution to a single trap depth at 0.12 eV. A comparison of current conduction mechanism in the respective single nanowires using conductive atomic force microscopy (C-AFM) further confirms the SCLC mechanism identified in GaAsSb ensemble device to be intrinsic. Higher current observed in current mapping by C-AFM, increased 4 K photoluminescence (PL) intensity along with reduced full-width half maxima and more symmetric PL spectra, and reduced asymmetrical broadening with increased TO/LO mode in room temperature Raman spectra for in situ annealed NWs again attest to effective annihilation of traps leading to the improved optical quality of NWs compared to as-grown NWs. Hence, the I–V–T analysis of the SCLC mechanism has been demonstrated as a simple approach to obtain information on growth induced traps in the NWs.

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Section: Resultscontrasting

confidence: 63%

Space charge limited conduction mechanism in GaAsSb nanowires and the effect of in situ annealing in ultra-high vacuum

Parakh¹,

Johnson²,

Pokharel³

et al. 2019

Nanotechnology

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“…The SCLC behaviour has previously been reported for silicon nanowires decorated by TiO 2 nanoparticles [32], coaxial AlGaN/GaN nanowires [29] and InAs nanowires [33]. The two mechanisms, Ohmic and SCLC, are both bulk-limited mechanisms because the dominating conductance is via the bulk of the nanowire.…”

Section: • An Intermediate Voltage Regime Between the Two With Anmentioning

confidence: 70%

In situ TEM modification of individual silicon nanowires and their charge transport mechanisms

Alam¹,

Andersen²,

Panciera³

et al. 2020

Nanotechnology

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Correlating the structure and composition of nanowires grown by the vapour-liquid-solid (VLS) mechanism with their electrical properties is essential for designing nanowire devices. In situ transmission electron microscopy (TEM) that can image while simultaneously measuring the current-voltage (I-V) characteristics of individual isolated nanowires is a unique tool for linking changes in structure with electronic transport. Here we grow and electrically connect silicon nanowires inside a TEM to perform in situ electrical measurements on individual nanowires at room temperature and high temperatures and upon surface oxidation. As-grown, the oxide-free nanowires have nonlinear I-V characteristics. We analyse the I-V measurements in terms of both bulk and injection limited transport models, finding Joule heating effects, bulk-limiting effects for thin nanowires and an injectionlimiting effect for thick wires when high voltages are applied. When the nanowire surface is modified by in situ oxidation, drastic changes occur in electronic properties. We investigate the relation between the observed geometry, changes in the surface and changes in electronic transport, obtaining information for individual nanowires that is inaccessible to other measuring techniques.

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“…This is a much simpler approach as compared to other approaches for the determination of the trap density [70] . The J SCLC -V characteristics that can be fitted by the power law J SCLC -V m with m > 2, are attributed to SCLC with an exponential distribution of traps [58,71] .…”

Section: Sclc With Trapsmentioning

confidence: 99%

Carrier transport mechanisms in semiconductor nanostructures and devices

Rafiq

2018

J. Semicond.

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Semiconductor nanostructures have gained importance due to their potential application in future nanoelectronic devices. For such applications, it is extremely important to understand the electrical properties of semiconductor nanostructures. This review presents an overview of techniques to measure the electrical properties of individual and clusters of semiconductor nanostructures using microcopy based techniques or by fabricating metallic electrical contacts using lithography. Then it is shown that current–voltage (I–V) characteristics can be used to determine the conduction mechanism in these nanostructures. It has been explained that various material parameters can be extracted from I–V characteristics. The frequently observed conduction mechanism in these nanostructures such as thermally activated conduction, space charge limited current (SCLC), hopping conduction, Poole Frenkel conduction, Schottky emission and Fowler Nordheim (FN) tunneling are explained in detail.

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Charge injection and trapping in TiO2 nanoparticles decorated silicon nanowires arrays

Cited by 6 publications

References 39 publications

Space charge limited conduction mechanism in GaAsSb nanowires and the effect of in situ annealing in ultra-high vacuum

Space charge limited conduction mechanism in GaAsSb nanowires and the effect of in situ annealing in ultra-high vacuum

In situ TEM modification of individual silicon nanowires and their charge transport mechanisms

Carrier transport mechanisms in semiconductor nanostructures and devices

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