Carrier transport mechanisms in semiconductor nanostructures and devices

Rafiq, M. A.

doi:10.1088/1674-4926/39/6/061002

Cited by 43 publications

(13 citation statements)

References 152 publications

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“…e value of L less than 2 ascribes that the current is attributed to the trap charge limiting current (TCLC) which is associated with the distribution of trapped charges in a junction. is behaviour is usually observed in materials with low free charge carrier concentration [22][23][24][25].…”

Section: Resultsmentioning

confidence: 97%

Electrical Characterization of Si/ZnO Nanorod PN Heterojunction Diode

Faraz

Shah

Alvi

et al. 2020

Advances in Condensed Matter Physics

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The electrical characterization of p-Silicon (Si) and n-Zinc oxide (ZnO) nanorod heterojunction diode has been performed. ZnO nanorods were grown on p-Silicon substrate by the aqueous chemical growth (ACG) method. The SEM image revealed high density, vertically aligned hexagonal ZnO nanorods with an average height of about 1.2 μm. Electrical characterization of n-ZnO nanorods/p-Si heterojunction diode was done by current-voltage (I-V), capacitance-voltage (C-V), and conductance-voltage (G-V) measurements at room temperature. The heterojunction exhibited good electrical characteristics with diode-like rectifying behaviour with an ideality factor of 2.7, rectification factor of 52, and barrier height of 0.7 V. Energy band (EB) structure has been studied to investigate the factors responsible for small rectification factor. In order to investigate nonidealities, series resistance and distribution of interface state density (NSS) below the conduction band (CB) were extracted with the help of I-V and C-V and G-V measurements. The series resistances were found to be 0.70, 0.73, and 0.75 KΩ, and density distribution interface states from 8.38 × 1012 to 5.83 × 1011 eV−1 cm−2 were obtained from 0.01 eV to 0.55 eV below the conduction band.

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Section: Resultsmentioning

confidence: 97%

Electrical Characterization of Si/ZnO Nanorod PN Heterojunction Diode

Faraz

Shah

Alvi

et al. 2020

Advances in Condensed Matter Physics

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“…Based on the unique Janus TMDC materials, realizing an accurate control of their electronic and optical properties is vital to meeting the multiple needs of device design. Electric field [9,10], strain [11,12], surface decoration [13,14], and magnetic doping [15][16][17] have been proven as effective means to modulate the electronic and optical behaviors of 2D TMDCs. Among these methods, strain engineering is reversible with the controllable process, while without generating additional lattice defects and damage in the materials.…”

Section: Introductionmentioning

confidence: 99%

Strain Engineering on the Electronic and Optical Properties of WSSe Bilayer

Guo

et al. 2020

Nanoscale Res Lett

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Controllable optical properties are important for optoelectronic applications. Based on the unique properties and potential applications of two-dimensional Janus WSSe, we systematically investigate the strain-modulated electronic and optical properties of WSSe bilayer through the first-principle calculations. The preferred stacking configurations and chalcogen orders are determined by the binding energies. The bandgap of all the stable structures are found sensitive to the external stress and could be tailored from semiconductor to metallicity under appropriate compressive strains. Atomic orbital projected energy bands reveal a positive correlation between the degeneracy and the structural symmetry, which explains the bandgap evolutions. Dipole transition preference is tuned by the biaxial strain. A controllable transformation between anisotropic and isotropic optical properties is achieved under an around − 6%~− 4% critical strain. The strain controllable electronic and optical properties of the WSSe bilayer may open up an important path for exploring next-generation optoelectronic applications.

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“…In addition, surface effects at the p–n junction, due to induced image charges that lead to a surface leakage current, can be a factor in deviating the values of ideality factors from the ideal state . To further evaluate the electrical properties of the cells, according to the SCLC behavior of solar cells in the child’s region, the values of the carrier mobility (μ) of the cells were calculated using the Mott–Gurney law (eq ) , where J is the dark current density (obtained by I /0.09), L is the separation between the electrode contacts or the thickness of the perovskite layer, ε s is the dielectric constant of perovskite (∼30), , ε 0 is the vacuum permittivity, and V is the applied voltage (0.7 V point was selected). The values obtained for the μ of cells are listed in Table .…”

Section: Resultsmentioning

confidence: 99%

Optoelectronic Properties of Mixed Sn/Pb Perovskite Solar Cells: The Study of Compressive Strain by Raman Modes

2020

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Mixed Sn/Pb perovskite solar cells offer a suitable alternative pathway to reduce lead toxicity and regulate optical band gap and therefore have significant potential for the development of clean and renewable energy technologies. In this study, the optical and electrical properties of CH 3 NH 3 Sn x Pb 1−x I 3 [0 ≤ x ≤ 1] solar cells under dark conditions were investigated. The compressive strain values of perovskite layers were measured and reported by analyzing the shift of their active Raman modes. Electrical characterizations under dark conditions showed that the values of the threshold voltage (V th ) and inverse saturation current (I 0 ) of the cells decrease and increase with increasing Sn concentration, respectively. Examination of the behavior of the space charge limited current (SCLC) of cells showed that the presence of Sn atoms increases the ability of the electrical carrier mobility (μ) of cells. Based on the results and calculations, the charge transport mechanism indices including the ideality factor (n), trap-filled limit voltage (V TFL ), trap-state density (n trap ), and the lifetime of minor carriers (τ n ) in each of the samples were characterized and reported.

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Carrier transport mechanisms in semiconductor nanostructures and devices

Cited by 43 publications

References 152 publications

Electrical Characterization of Si/ZnO Nanorod PN Heterojunction Diode

Electrical Characterization of Si/ZnO Nanorod PN Heterojunction Diode

Strain Engineering on the Electronic and Optical Properties of WSSe Bilayer

Optoelectronic Properties of Mixed Sn/Pb Perovskite Solar Cells: The Study of Compressive Strain by Raman Modes

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