2019
DOI: 10.1007/s00706-019-02497-1
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Charge–discharge performances of the Si–O–Al electrodes

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Cited by 8 publications
(9 citation statements)
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“…The elemental composition of the negative electrode is in the range of values that provide a capacity within 1000-1500 mA•h/g [17]. As Si/Al ratio in the target was 3 while in the Si-O-Al film this ratio is 3.2, the error of the estimation of this element's concentration in the Si-O-Al nanocomposite is insignificant.…”
Section: Morphology and Elemental Composition Of Functional Layersmentioning
confidence: 99%
“…The elemental composition of the negative electrode is in the range of values that provide a capacity within 1000-1500 mA•h/g [17]. As Si/Al ratio in the target was 3 while in the Si-O-Al film this ratio is 3.2, the error of the estimation of this element's concentration in the Si-O-Al nanocomposite is insignificant.…”
Section: Morphology and Elemental Composition Of Functional Layersmentioning
confidence: 99%
“…The technological parameters of Si@O@Al deposition are given in Table 1. In [15][16][17][18], this technology and Si@O@Al's properties are described in more detail. The columnar structure of Si@O@Al promotes lithium diffusion through the entire electrode while layered structure enables a greater number of lithiation-delithiation cycles in liquid electrolytes.…”
Section: Si@o@al Electrode Manufacturing and Characterizationmentioning
confidence: 99%
“…A simple way to overcome this obstacle, described in [15][16][17][18], is an artificial limitation of the capacity by the partial oxidation of silicon. This is achieved by the magnetron sputtering of silicon in an oxygen flow, resulting in the formation of the Si@O@Al nanocomposite.…”
Section: Introductionmentioning
confidence: 99%
“…This problem was solved by using amorphous silicon with artificially restricting its capacity by its partial oxidation and increasing its conductivity by implanting 10−15 at.% of aluminum into the silicon matrix. Finally, a magnetron sputtering technique for deposition the electrode nanocomposite material Si@O@Al was developed [1][2][3]; having a high capacity (up to 3000 mA • h/g), this material withstands within TSLIB more than 1000 charge−discharge cycles.…”
mentioning
confidence: 99%