Charge-Deposition Spectra in Thin Slabs of Silicon Induced by Energetic Protons

A simple model for calculating proton induced SEU

“…The detectors studied were EG&G Ortec, series D and X, fully depleted SBDs with thicknesses of 2pmId11OOpm and a sensitive area S=10 "2. Calibration of the deposited energy scale was carried out in a manner similar to that in [9]. Using alpha particles sources we calibrated the scale of the lOOpm SBlD which is thicker than the ranges of the alpha particles used.…”

“…The available experimental data on SBDs, mostly measured by McNulty's group [9], is limited. Here we describe newly rneasured SBD spectra.…”

Latchup in integrated circuits from energetic protons

“…Several papers have discussed proton recoil products and proton cross sections [1,2,[12][13][14]. Because the recoil products have short range, the number of interactions depends on the depth over which charge from the reaction recoils can be collected, as well as the effective area.…”

“…The distribution of recoil energies depends on proton energy. Figure 3 shows a representative example, after El Teleaty, et al [13]. They used a surface-barrier detector, 2.5 µm thick, for their experiments.…”

Nuclear Reactions in GaAs and Si and Their Role in the Single Event Upset Problem

“…The CUPID (Clarkson University Proton Interactions in Devices) codes have been shown to accurately predict the charge generation in fully depleted Si surface-barrier detectors over a wide range of incident proton energies where the thickness of the detectors was varied from 2.5 to 97 pum (1)(2)(3). However, the codes have never been proven to work for GaAs devices nor have they been tested against measurements with partially depleted structures in either GaAs or silicon.…”