1984
DOI: 10.1016/0038-1098(84)90336-3
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Charge density wave depinning and switching in NbSe3

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Cited by 26 publications
(14 citation statements)
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“…This bistable behavior in the strong pinning regime will manifest itself in the currentvoltage characteristics of the sample. This is known as "switching" and is a generic feature of low-temperature CDWs [2,[28][29][30]. This behavior, which follows naturally from our approach, is in qualitative agreement with recent transport measurements of Lemay et al [2].…”
Section: (Received 1 April 1999)supporting
confidence: 90%
“…This bistable behavior in the strong pinning regime will manifest itself in the currentvoltage characteristics of the sample. This is known as "switching" and is a generic feature of low-temperature CDWs [2,[28][29][30]. This behavior, which follows naturally from our approach, is in qualitative agreement with recent transport measurements of Lemay et al [2].…”
Section: (Received 1 April 1999)supporting
confidence: 90%
“…The CDW phase transition could be driven not only by temperature but also by the electrical field. [10][11][12]20,39 More importantly, electrically driven CDW phase transition could be applied to high-efficiency oscillators and memristive switching devices. 10−12 In the VTe 2 films, we also found that the typical resistivity switching could be driven by an in-plane electrical field and the resistivity states are nonvolatile, which could be applied to nonvolatile memory devices.…”
Section: Acs Applied Materials and Interfacesmentioning
confidence: 99%
“…Hall et al utilized a temperature-dependent investigation into CDW depinning in NbSe 3 to distinguish between the CDW slide and CDW switch. 20 The CDW slide was shown to result in a kink-type transition in the I−V response, while the CDW switch caused an abrupt change in resistance. In addition, the onset field of the CDW slide was explored and exhibited a negative correlation with temperature.…”
Section: Acs Applied Materials and Interfacesmentioning
confidence: 99%
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“…2 -3 In the temperature regime of switching, the threshold fields for the onset of switching are roughly temperature independent, although the associated hysteresis grows with decreasing temperature. 7 For the samples studied here, switching was no longer observed above 50 K in Fe x NbSe 3 or above 30 K in NbSe 3 . The experiments described above were repeated at various temperatures within and above the switching regime.…”
mentioning
confidence: 64%