1986
DOI: 10.1103/physrevlett.56.2399
|View full text |Cite
|
Sign up to set email alerts
|

Switching and Phase-Slip Centers in Charge-Density-Wave Conductors

Abstract: We demonstrate that switching in the eharge-density-wave (CDW) conductors Fe x NbSe3 and NbSe3 is associated with a division of the CDW condensate into distinct macroscopic regions with independent CDW depinning fields and independent CDW drift velocities. These well-defined regions are separated by localized phase-slip centers. We explicitly determine the location within the crystalline bulk, and the spatial extent, of the phase-slip interface. Switching results from initial phase breaking at either side of t… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1

Citation Types

0
4
0

Year Published

1987
1987
2017
2017

Publication Types

Select...
5
2
1

Relationship

0
8

Authors

Journals

citations
Cited by 45 publications
(4 citation statements)
references
References 12 publications
0
4
0
Order By: Relevance
“…At higher field the velocity of the CDW becomes large and the back-flow current due to normal carrier is not sufficient to screen the internal field, hence the damping is negligible and the CDW can slide undeformedly, giving low resistive (ON) state. Multistability in I -V characteristics has also been observed in semiconducting CDW materials [29].…”
mentioning
confidence: 83%
“…At higher field the velocity of the CDW becomes large and the back-flow current due to normal carrier is not sufficient to screen the internal field, hence the damping is negligible and the CDW can slide undeformedly, giving low resistive (ON) state. Multistability in I -V characteristics has also been observed in semiconducting CDW materials [29].…”
mentioning
confidence: 83%
“…The pinned and electrically driven CDW system first undergoes a transition into a plastically sliding state (at E T1 ), followed by a second hysteretic transition (at E T2 ) to a coherently moving CDW state [28]. Alternately, the hysteretic behavior in dc transport of DW based systems can also result from a phase slippage mechanism between weakly coupled CDW domains [29,30].…”
Section: Response and Depinning Of Density Wavesmentioning
confidence: 99%
“…Switching in NbSe 3 was ascribed to the presence inside crystals of extended strong pinning centres which generates phase slippage [350]. Location of these pinning centres was determined by measuring the I-V characteristics with movable non-pertubating voltage electrodes [611]. On the contrary, in ref.…”
Section: Switching In Nbsementioning
confidence: 99%