Charge Collection Dynamics of the ARCADIA Passive Pixel Arrays: Laser Characterization and TCAD Modeling

Corradino, Thomas; Betta, G.-F. Dalla; Neubüser, C.; Pancheri, L.

doi:10.3389/fphy.2022.929251

Cited by 3 publications

(3 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The characteristic parameters, i.e. substrate and epitaxial layer thickness and doping concentration, have been extracted for all wafers of the first ARCADIA production run, and have been used in TCAD simulations of the capacitance-voltage (CV) characteristics and transients [10]. The capacitance of the nwell collection nodes has been measured applying the depletion voltage from the backside, while varying the pwell voltage thus the extension of the depletion region in the epi-layer.…”

Section: Characterisation Of Passive Pixel Matrices and Tcad Simulati...mentioning

confidence: 99%

First characterization results of ARCADIA FD-MAPS after X-ray irradiation

et al. 2023

Self Cite

View full text Add to dashboard Cite

The ARCADIA collaboration is developing fully-depleted (FD) Monolithic Active Pixel Sensors (MAPS) in a 110 nm CMOS process in collaboration with LFoundry. The sensor design incorporates an n+ collection node within a n-type epi-layer on top of a high-resistivity n-type substrate and p+ backside. Thus, the pn-junction sits on the backside and through an applied backside bias, the full substrate gets depleted. The targeted applications of this technology range from future high energy physics experiments to space applications, and medical and industrial scanners. Together, these applications set the minimum requirements on the detector: data collection at hit rates of (10–100) MHz/cm2, full signal processing within (1–10) μs, maximum power consumption (5–20) mW/cm2 and radiation tolerances of up to 3.4 Mrad or 6.2 × 1012 1 MeV neutron equivalent fluence. In order to proof the performance of the technology, a demonstrator chip of 512 × 512 pixels with 25 μm pitch was designed and fabricated in a first engineering run in 2021, together with additional test structures of pixel and strip arrays with different pitches and sensor geometries. The production run has produced functional passive and active pixel matrices. Earlier studies have shown that positive oxide charges and traps at the Si-SiO2 interface, introduced by ionising radiation, affect the depletion region around the collection electrode, increasing the pixel capacitance. By varying the gap size between collection node and pwells, the geometry can be optimised to keep the capacitance low also after irradiation. To study the performance after irradiation, of the optimised diode designs, the passive pixel matrices were irradiated with doses up to 10 Mrad (SiO2) using a X-ray tube with a Tungsten anode. The measurements are complemented by TCAD simulations. The maximum capacitance increase after irradiation was found to reach 6 and 12 fF/pixel for pixel pitches of 25 and 50 μm, respectively. The relative capacitance increase after irradiation has hereby been found to reach up to 250% after a dose of 10 Mrad.

show abstract

Section: Characterisation Of Passive Pixel Matrices and Tcad Simulati...mentioning

confidence: 99%

First characterization results of ARCADIA FD-MAPS after X-ray irradiation

et al. 2023

Self Cite

View full text Add to dashboard Cite

show abstract

“…Exploiting drift as main charge transport mechanism, the sensors implemented in this technology are able to provide good performance in terms of charge collection dynamics. Namely, fast charge collection times in the order of few ns have been measured on the produced passive pixel arrays with layouts designed to improve the charge collection speed and on large pad diodes implemented with the same technology [11,12]. The ARCADIA sensors have been fabricated starting from high resistivity n-type substrates thinned down to nominal thicknesses of 100 and 200 μm or, alternatively, using a n-type epitaxial layer, having a nominal thickness in the order of 48 μm, grown on top of a highly doped p + substrate.…”

Section: Introductionmentioning

confidence: 99%

Simulation and first characterization of MAPS test structures with gain for timing applications

Corradino,

Neubüser,

Giovanazzi

et al. 2024

J. Inst.

Self Cite

View full text Add to dashboard Cite

Thanks to their advantages in terms of easiness of manufacturing and reduced production costs, Monolithic Active Pixel Sensors (MAPS) represent an appealing solution for radiation imaging applications, which require to cover large areas with pixelated detectors. In the next upgrade of the ALICE detector, that will have to deal with the higher event rate resulting from the planned increase in the LHC luminosity, it is foreseen to include two additional sensor layers to perform Time of Flight (ToF) measurements. Trying to reach the challenging timing resolution required by the ALICE ToF layers, an internal gain layer has been included in the test structures of the third engineering run of the ARCADIA project to improve the timing performance of this MAPS technology. In the paper we will present an overview of the main results obtained from the electrical and the dynamic characterization of the fabricated devices, which have been compared with the behavior expected from the preliminary TCAD simulations carried out in the design phase. The experimental results confirmed the feasibility of embedding a gain layer in the ARCADIA 110 nm CMOS technology to develop monolithic LGADs.

show abstract

“…The compatibility with standard CMOS production processes and, consequently, the reduction of the production costs as well as the absence of bump bonding represent the main advantages of this technology with respect to standard hybrid detectors [8]. Considering the widespread interest for this detector technology, the ARCADIA project targets the development of Fully Depleted MAPS, which are manufactured in a technology compatible with a 110 nm CMOS production process, able to exploit drift as the main charge transport mechanism and therefore providing fast charge collection dynamics [9][10][11]. Active pixel matrices together with passive test structures have been included in the wafers of the first two productions.…”

Section: Introductionmentioning

confidence: 99%

ARCADIA MAPS process qualification through the electrical characterization of passive pixel arrays

et al. 2023

Self Cite

View full text Add to dashboard Cite

The development of novel Monolithic Active Pixel Sensor (MAPS) technologies has been pursued by several collaborations in the last two decades. The ARCADIA project aims to design fully depleted MAPS for medical, space, HEP and X-ray detection applications, that can be produced with a commercial 110 nm CMOS production process. Among the test structures of the first two engineering runs of the project, passive pixel arrays with different pitches and layouts were included. The main characteristics of the produced devices in terms of dark current, depletion voltage, punch through current and pixel capacitance have been evaluated from IV and CV characteristics of the pixel arrays. Groups of four samples have been extracted from as many different positions within each wafer and electrically characterized to obtain information on the variability in the pixel operating voltage range and in the pixel dark current, reflecting variations related to the employed production process. The experimental data demonstrated a good uniformity in the considered parameters for different sample positions within the produced wafers, as well as for samples extracted from different wafers with the same substrate type.

show abstract

Charge Collection Dynamics of the ARCADIA Passive Pixel Arrays: Laser Characterization and TCAD Modeling

Cited by 3 publications

References 15 publications

First characterization results of ARCADIA FD-MAPS after X-ray irradiation

First characterization results of ARCADIA FD-MAPS after X-ray irradiation

Simulation and first characterization of MAPS test structures with gain for timing applications

ARCADIA MAPS process qualification through the electrical characterization of passive pixel arrays

Contact Info

Product

Resources

About