Charge collection and capacitance–voltage analysis in irradiated n-type magnetic Czochralski silicon detectors

Analysis of deep level parameters in irradiated silicon detectors

“…We have shown before that the bias dependence of the collected charge, called CCE(V), and of the reciprocal capacitance from C-V measurements are identical, since both are dependent on the thickness of the space charge region layer [1]. This is true as long as the detector depleted from the front side near the implant.…”

“…In order to reduce the leakage current noise, CCE(V) and C-V measurements taken at -20 °C. More details on the experimental system for CCE(V) are given in [1].…”

Determination of the Charge Collection Efficiency in Neutron Irradiated Silicon Detectors

“…The Si readout system allows for a binary readout from 64 AC-coupled detector channels with a 100 ns shaping time. The system uses the XILINX ML405 board and is an upgrade of the previous system at UCSC, PTSM [17].…”

“…It is possible to reach efficiency larger than 100%: the sources produces no photons to cause false triggers, but a few percent correction is made for the noise hits in the trigger scintillator. It also permits one to determine in threshold scans the median charge (50% efficiency point) and the peak charge (peak in the derivative of the threshold scan), as described in detail in [17]. Measurements of the collected charge were performed at lowered temperature between and inside of a freezer.…”

CCE studies in silicon

“…It has been suggested that the higher oxygen content of the MCz crystals could lead to better radiation hardness with respect to FZ silicon [11] and several studies have already been performed on this material (see e.g. [12][13][14][15]).…”