CCE studies in silicon

Casse, G.

doi:10.22323/1.068.0036

Cited by 4 publications

(5 citation statements)

References 13 publications

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“…Magnetic Czochralski This growth technique results in a high oxygen concentration in the silicon, which was shown to be beneficial in terms of radiation hardness by RD48 3 and RD50 4 . See also [3].…”

Section: Methodsmentioning

confidence: 99%

“…These materials are available as n-type (p-in-n) as was used in the current Tracker and as p-type (n-in-p) with electron readout, which shows reduced trapping effects at high irradiation (e.g. [4]).…”

Section: Methodsmentioning

confidence: 99%

“…It was found (e.g. in [3], [4], [5]) that mixed irradiations lead to different effects in different materials. Therefore we need to probe these effects on our materials in a consistent way.…”

Section: Introductionmentioning

confidence: 99%

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Silicon sensor developments for the CMS Tracker upgrade

Dierlamm¹

2012

J. Inst.

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Preparing for the high-luminosity phase of LHC the CMS Tracker collaboration has started a campaign to identify the future planar silicon sensor technology baseline for a new Tracker. A variety of 6 inch wafers have been ordered in different thicknesses and technologies at HPK. Thicknesses ranging from 50 µm to 300 µm are explored on float-zone, magnetic Czochralski and epitaxial material both in n-in-p and pin -n versions. p-stop and p-spray are explored as insulation technology for the n-in-p type sensors as well as the feasibility of double metal routing on 6 inch wafers. To explore the limits of the technologies many different structures have been designed to answer different questions, e.g. geometry, Lorentz angle, radiation tolerance, annealing behavior, read-out schemes. This contribution provides an overview of the individual structures and their characteristics and summarizes measurements done on small strip sensors before and after irradiations.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

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Silicon sensor developments for the CMS Tracker upgrade

Dierlamm¹

2012

J. Inst.

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“…N-type wafer substrates present type inversion effects [9] and collect holes, whose mobility is slower than electrons, therefore they are more prone to be trapped. To avoid those effects, the Phase-II upgrade for the ATLAS and CMS experiments use p-type bulk silicon [10,11]. Float Zone or Magnetic Czochralski techniques to fabricate wafer ingots induce different oxygen atom concentrations inside the wafer and show different performance after irradiation.…”

Section: Overview Of Rd50 21 Materials Characterizationmentioning

confidence: 99%

Silicon Detectors for Future Experiments – RD50 Status Report

Baselga

2024

Proceedings of the 32nd International Workshop on Vertex Detectors — PoS(VERTEX2023)

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In 2001 the Large Hadron Collider (LHC) and High Luminosity Large Hadron Collider (HL-LHC) were facing the challenging construction of experiments that have to withstand radiation levels never dealt with before in a particle detector. The innermost tracking layers, closest to the beam, are expected to reach an instantaneous luminosity of 7.5 × 10 34 cm −2 s −1 , being the result of 200 simultaneous proton-proton interactions per bunch crossing, and fluence levels of 2×10 16 n eq /cm 2 . The LHC experiments' upgrades utilize silicon for the tracking detection layers, which have to withstand a huge amount of radiation at the end of the experiment lifetime without losing the detectors' performance. Therefore, in 2001, there was a need to study the precise damage that those detectors were going to receive, as well as to simulate, understand and mitigate the radiation effects in the silicon detectors. RD50 is a CERN-based collaboration that started in 2002. The collaboration is dedicated to study radiation-hard semiconductor devices for very high luminosity colliders. The collaboration is finishing its activity by the end of 2023 with 65 institutes and more than 400 members, leaving more than 20 years of radiation damage studies and leading the development of new technologies for radiation-hard semiconductor devices, as well as detector technologies and 4D detectors. The collaboration is organized into four research areas: material characterisation, detector characterisation, new detectors and full detector systems. During 20 years, different silicon detector layouts and materials have been extensively studied before and after irradiation. The trap centres created inside the silicon have been parametrized, which provided valuable information for the implementation of radiation effects for simulation software tools. There have been strategies to mitigate the radiation damage, as well as new measurement techniques to study the electric field inside the sensor bulk. Silicon detector concepts, including monolithic, 3D and LGAD detectors, have been thoroughly investigated for use inside the HL-LHC. As a result, 3D detectors were installed inside the ATLAS IBL layer, and LGADs are being introduced in the timing detectors of the CMS and ATLAS Phase-II upgrades. This text aims to summarise more than 20 years of RD50 results as well as some current research.

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“…Recent results [25] indicate that with a 140 µm thick sensor irradiated with 5 × 10 15 n eq /cm 2 it is possible to collect 12 thousand electrons at 1000 V, roughly 2000 electrons more than a standard 300 µm thick planar sensor.…”

Section: Thin Productionmentioning

confidence: 99%

Recent progress of the ATLAS Planar Pixel Sensor R & D Project

Bomben

2012

Physics Procedia

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The foreseen luminosity upgrade for the LHC (a factor of 5-10 more in peak luminosity by 2021) poses serious constraints on the technology for the ATLAS tracker in this High Luminosity era (HL-LHC). In fact, such luminosity increase leads to increased occupancy and radiation damage of the tracking detectors.To investigate the suitability of pixel sensors using the proven planar technology for the upgraded tracker, the ATLAS Planar Pixel Sensor R&D Project was established comprising 17 institutes and more than 80 scientists. Main areas of research are the performance of planar pixel sensors at highest fluences, the exploration of possibilities for cost reduction to enable the instrumentation of large areas, the achievement of slim or active edge designs to provide low geometric inefficiencies without the need for shingling of modules and the investigation of the operation of highly irradiated sensors at low thresholds to increase the efficiency.In the following I will present results from the group, concerning mainly irradiated-devices performance, together with studies for new sensors, including detailed simulations.

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CCE studies in silicon

Cited by 4 publications

References 13 publications

Silicon sensor developments for the CMS Tracker upgrade

Silicon sensor developments for the CMS Tracker upgrade

Silicon Detectors for Future Experiments – RD50 Status Report

Recent progress of the ATLAS Planar Pixel Sensor R & D Project

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