Charge carrier recombination and diffusion in InGaAs(P) epitaxial layers

Abstract

The method of picosecond light‐induced grating is used for the investigation of non‐equilibrium charge carrier dynamics in epitaxial layers of InGaAsP, InGaAs and InP. The carrier recombination time τR and the diffusion coefficient Da are determined. The influence of bleaching on the revealed values is discussed.

High fluence ultrafast dynamics of semiconductor saturable absorber mirrors

“…Assuming an initial carrier distribution described by ϳsin 4 (x/L) ͑proportional to the square of the intensity͒ and a layer thickness Lϭ230 nm, an ambipolar diffusion coefficient of D a ϭ2.7 cm 2 /s is found for a FCA decay time of 5 ps. This value of D a is consistent with other estimates found in the literature for InP, 11 and further supports the claim that the ϳ5 ps time constant of the FCA component originates from carrier diffusion in InP.…”

Behaviors of beryllium compensation doping in InGaAsP grown by gas source molecular beam epitaxy

“…6,7 In order to uncover the carrier relaxation dynamics in InGaAsP alloys, considerable efforts have been devoted to the optical and lifetime characterizations of bulk and quantum well type structures thus far. 4,6,[8][9][10][11][12][13][14] However, only very few have addressed p type InGaAsP 4,14 where compensation behaviors become of major concern. A comprehensively understanding on the carrier transport and relaxation behaviors in p type InGaAsP, especially at different Be compensation degrees, is still of great significance to device applications.…”