Ga(x)In(1-x)As, physical properties

Physical modelling and experimental characterisation of InAlAs/InGaAs avalanche photodiode for 10 Gb/s data rates and higher

“…The electron mobilities of each layer (InGaAs, InAlAs, and InAlGaAs) are different depending upon the doping profile of each layer. All required values were obtained from the literatures in [12][13][14]. For the simulation of the dark current, several models have to be considered.…”

“…To model the impact ionisation process of the APD, an IMPACT SELBER model was used as will be discussed later in Section 4. As the SILVACO library does not contain material parameters for InGaAs, InAlAs, and InAlGaAs, all III-V material parameters were obtained both from the literatures and from validation from a number of devices studied over the years in our lab [4,[11][12][13][14].…”