Charge and spin transport across two-dimensional non-centrosymmetric semiconductor/metal interface

Jantayod, A.; Pairor, P.

doi:10.1016/j.physe.2012.12.007

Cited by 9 publications

(9 citation statements)

References 30 publications

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“…In this case the van Hove singularities appear in magnetic field 0 < B < ∼ 2T. Other possibility to observe the predicted topological transitions is the in-plane tunnelling spectroscopy [43][44][45]. While a tunnelling conductances is proportional to the density of states at a shifted energy ρ (ǫ = E F − eU ), where eU is a bias energy, the electron states below Fermi level can be investigated.…”

Section: Discussionmentioning

confidence: 99%

Magnetic field driven topological transitions in the noncentrosymmetric energy spectrum of the two-dimensional electron gas with Rashba-Dresselhaus spin-orbit interaction

Kozlov

Kolesnichenko

2019

Phys. Rev. B

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Two dimension electron systems with combined Rashba and Dresselhaus spin orbit interaction (SOI) having a complicated energy spectrum with a conical point and four critical points are promising candidates to observe electron topological transitions. In the present paper we have investigated the evolution of the electron spectrum and isoenergetic contours under the influence of parallel magnetic field. General formulas for energies of critical points for arbitrary values of SOI constants and magnetic field are found. The existence of critical magnetic fields at which a number of critical points is changed has been predicted. The magnetic field driving topological Lifshitz transitions in the geometry of isoenergetic contours have been studied. Van Hove's singularities in the electron density of states are calculated. The obtained results can be used for theoretical investigations of different electron characteristics of such 2D systems.

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Section: Discussionmentioning

confidence: 99%

Magnetic field driven topological transitions in the noncentrosymmetric energy spectrum of the two-dimensional electron gas with Rashba-Dresselhaus spin-orbit interaction

Kozlov

Kolesnichenko

2019

Phys. Rev. B

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“…The energy dependence of the DOS in the NRM state is the same as that in the 2DEG. The energy dependence in the RRM state is the same as that in the one-dimensional electron gas (1DEG), despite the presence of a two-dimensional system (see Table I) 11,16 :…”

Section: A Model Of Frmmentioning

confidence: 91%

“…the Fermi level in the FRM. The interfacial barrier is assumed to be a delta function 9,11,17 for the conservation of the y-component of the momentum k y . We also assume that the width of the junction along the y-direction, L, is sufficiently large.…”

Section: B Methods Of Calculationmentioning

confidence: 99%

“…These bands cross at E = 0 and have an annular minimum at E = −E α . Here, E α = m R α 2 /(2 2 ) is the Rashba energy 9,11,14,[20][21][22][23][24] . For E > 0, the Fermi level crosses E + and E − bands, and there are two Fermi surfaces with opposite spin direction (see Fig.…”

Section: A Model Of Frmmentioning

confidence: 99%

“…As a result, RSOC affects the charge transport of the 2DEG. Thus, the gate voltage (V g ) dependence (i.e., Fermi level dependence) of the charge conductance of normal metal (NM)/2DEG junctions has been studied [8][9][10][11][12][13][14][15][16] .…”

Section: Introductionmentioning

confidence: 99%

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Unconventional gate voltage dependence of the charge conductance caused by spin-splitting Fermi surface by Rashba-type spin-orbit coupling

Oshima

Taguchi

Tanaka

2019

Physica E: Low-dimensional Systems and Nanostructures

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We calculate the gate voltage (V g ) dependence of charge conductance in a normal metal (NM)/two dimensional electron gas (2DEG) junction, where Rashba spin-orbit coupling and ferromagnetism exist in the 2DEG. We call this 2DEG as the ferromagnetic Rashba metal (FRM) and the chemical potential of the FRM is controlled by V g . We clarify the physical origin of the unconventional V g dependence of charge conductance in the NM/FRM junction found in our previous work [J. Phys. Soc. Jpn. 87, 034710 (2018)], in which the charge conductance increases with V g , although the number of carries in FRM decreases. We calculate the momentum-resolved charge conductance. It is clarified that the origin of the unconventional V g dependence is due to the non-monotonic change in the size of the inner Fermi surface in FRM as a function of V g .

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Tight binding calculation of tunneling conductance of a metal/ferromagnetic junction

Jantayod

2017

Physica B: Condensed Matter

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Charge and spin transport across two-dimensional non-centrosymmetric semiconductor/metal interface

Cited by 9 publications

References 30 publications

Magnetic field driven topological transitions in the noncentrosymmetric energy spectrum of the two-dimensional electron gas with Rashba-Dresselhaus spin-orbit interaction

Magnetic field driven topological transitions in the noncentrosymmetric energy spectrum of the two-dimensional electron gas with Rashba-Dresselhaus spin-orbit interaction

Unconventional gate voltage dependence of the charge conductance caused by spin-splitting Fermi surface by Rashba-type spin-orbit coupling

Tight binding calculation of tunneling conductance of a metal/ferromagnetic junction

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