Charge and Spin Diffusion in Mesoscopic Metal Wires and at Ferromagnet/Nonmagnet Interfaces

Johnson, Mark; Byers, J. M.

doi:10.1002/chin.200338218

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(3 citation statements)

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“…Even in the absence of the resistive contacts, effective spin injection into a semiconductor can be achieved if the resistance mismatch is reduced by using for spin injectors either a magnetic semiconductor or a highly spin-polarized ferromagnet. 44 While there was early experimental evidence (Alvarado and Renaud, 1992) that employing resistive (tunneling) contacts could lead to an efficient spin injection, 45 a systematic understanding was provided by Rashba (2000) and supported by subsequent experimental and theoretical studies (Fert and Jaffres, 2001;Smith and Silver, 2001;Rashba, 2002b;Johnson, 2003;Johnson and Byers, 2003;Takahashi and Maekawa, 2003). As can 41 Carrier density will also be influenced by the effect of screening, which changes with the dimensionality of the spin injection geometry (Korenblum and Rashba, 2002).…”

Section: F/n Junctionmentioning

confidence: 99%

“…This is different from the usual (quasi-)one-dimensional analysis in which spin and charge currents flow along the same paths. For a full understanding of the van der Pauw cross geometry, twodimensional modeling might be necessary (Johnson and Byers, 2003;Takahashi and Maekawa, 2003).…”

Section: Spin Injection Into Metalsmentioning

confidence: 99%

“…( 19)]. Estimates of how these considerations would affect the results of Jedema et al (2001) were given by Jedema et al (2002c) as well as by others (Johnson and Byers, 2003;Takahashi and Maekawa, 2003), who analyzed the importance of multidimensional geometry. In addition to comparing characteristic values of contact resistance obtained on different samples, 63 for a conclusive understanding it will be crucial to have in situ measurements.…”

Section: Spin Injection Into Metalsmentioning

confidence: 99%

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Spintronics: Fundamentals and applications

2004

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Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics. CONTENTS

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