Charge and energy transfer of quantum emitters in 2D heterostructures

Xu, Zai‐Quan; Mendelson, Noah; Scott, John; Li, Chi; Abidi, Irfan Haider; Liu, Hongwei; Luo, Zhengtang; Aharonovich, Igor; Toth, Milos

doi:10.1088/2053-1583/ab7fc3

Cited by 20 publications

(19 citation statements)

References 36 publications

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“…In the context of transfer phenomena, graphene and transition metal dichalcogenides (TMDs) are certainly playing a major role with many cardinal demonstrations. Graphene, in particular, has been extensively utilized as an acceptor material in FRET processes involving several donor systems: dye molecules, , quantum dots, diamond nitrogen-vacancy (NV) centers, , rare-earth elements, and hexagonal boron nitride (hBN) emitters . The same can be said for TMDs, which have been used both as acceptor materials for quantum dots, NV centers, and hBN emitters, as well as donor materials coupled to graphene .…”

Section: Fundamental Studies and Practical Applicationsmentioning

confidence: 99%

“…The value 2.07 eV corresponds to a ZPL transition located at ∼600 nm. Reprinted with permission from ref . Copyright 2020 IOP Publishing Ltd. (c) (Top and bottom) Schematic illustrations of the erbium–graphene hybrid system when the Fermi energy of graphene is tuned to ∼0.6 and ∼0.3 eV, respectively.…”

Section: Fundamental Studies and Practical Applicationsmentioning

confidence: 99%

“…In the context of fundamental investigations, graphene has also been coupled to quantum emitters in hBN . Unlike for traditional FRET investigations though, in this case the main aim was to use graphene as a charge acceptor.…”

Section: Fundamental Studies and Practical Applicationsmentioning

confidence: 99%

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Quantum Energy and Charge Transfer at Two-Dimensional Interfaces

Bradac

Aharonovich

2021

Nano Lett.

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Energy and charge transfer processes in interacting donor−acceptor systems are the bedrock of many fundamental studies and technological applications ranging from biosensing to energy storage and quantum optoelectronics. Central to the understanding and utilization of these transfer processes is having full control over the donor−acceptor distance. With their atomic thickness and ease of integrability, two-dimensional materials are naturally emerging as an ideal platform for the task. Here, we review how van der Waals semiconductors are shaping the field. We present a selection of some of the most significant demonstrations involving transfer processes in layered materials that deepen our understanding of transfer dynamics and are leading to intriguing practical realizations. Alongside current achievements, we discuss outstanding challenges and future opportunities.

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Section: Fundamental Studies and Practical Applicationsmentioning

confidence: 99%

Section: Fundamental Studies and Practical Applicationsmentioning

confidence: 99%

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Quantum Energy and Charge Transfer at Two-Dimensional Interfaces

Bradac

Aharonovich

2021

Nano Lett.

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“…We first verified that covering the pristine hBN crystal with a patterned few-layer graphene crystal masks liquid-activated defects, as was observed for other types of hBN defects. 49,50 As shown in Fig. S8, emitters on bare hBN are randomly distributed, but the graphene mask allows for the precise positioning of emitters on the basal plane of hBN in liquid.…”

Section: Integration In Single-digit Nanofluidic Systemsmentioning

confidence: 99%

Liquid-activated quantum emission from native hBN defects for nanofluidic sensing

Ronceray¹,

You²,

Glushkov³

et al. 2022

Preprint

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Nanostructures made of two-dimensional (2D) materials have become the flagship of nanofluidic discoveries in recent years 1,2 .By confining liquids down to a few atomic layers, anomalies in molecular transport 3-5 and structure 6, 7 have been revealed.Currently, only indirect and ensemble averaged techniques have been able to operate in such extreme confinements, as even the smallest molecular fluorophores are too bulky to penetrate state-of-the-art single-digit nanofluidic systems 8 . This strong limitation calls for the development of novel optical approaches allowing for the direct molecular imaging of liquids confined at the nanoscale. Here, we show that native defects present at the surface of hexagonal boron nitride 9 (hBN) -a widely used 2D material -can serve as probes for molecular sensing in liquid, without compromising the atomic smoothness of their host material. We first demonstrate that native surface defects are readily activated through interactions with organic solvents and confirm their quantum emission properties. Vibrational spectra of the emitters suggest that their activation occurs through the chemisorption of carbon-bearing liquid molecules onto native hBN defects. The correlated activation of neighboring defects reveals single-molecule dynamics at the interface, while defect emission spectra offer a direct readout of the local dielectric properties of the liquid medium. We then harvest these effects in atomically smooth slit-shaped van der Waals channels, revealing molecular dynamics and increasing dielectric order under nanometre-scale confinement. Liquid-activated native defects in pristine hBN bridge the gap between solid-state nanophotonics and nanofluidics and open up new avenues for nanoscale sensing and optofluidics. MainFluorescent defect centers in wide band-gap materials like diamond, silicon carbide or boron nitride have received increasing attention in recent years as they allow to probe nanoscale matter through interactions with their dipoles and electron spins 10,11 . In particular, a variety of point defects with energy levels well within the 6 eV band gap of hexagonal boron nitride (hBN) were

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“…Such heterostructure has also been realized experimentally. [53][54][55][56] The structure contains 2299 valence electrons, and it is illustrated in Fig. 3 together with selected orbital isosurfaces.…”

Section: Stochastic Subspace Self-energymentioning

confidence: 99%

Decomposition and embedding in the stochastic $GW$ self-energy

Romanova,

Vlček

2020

Preprint

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We present two new developments for computing excited state energies within the GW approximation. First, calculations of the Green's function and the screened Coulomb interaction are decomposed into two parts: one is deterministic while the other relies on stochastic sampling. Second, this separation allows constructing a subspace self-energy, which contains dynamic correlation from only a particular (spatial or energetic) region of interest. The methodology is exemplified on large-scale simulations of nitrogen-vacancy states in a periodic hBN monolayer and hBN-graphene heterostructure. We demonstrate that the deterministic embedding of strongly localized states significantly reduces statistical errors, and the computational cost decreases by more than an order of magnitude. The computed subspace self-energy unveils how interfacial couplings affect electronic correlations and identifies contributions to excited-state lifetimes. While the embedding is necessary for the proper treatment of impurity states, the decomposition yields new physical insight into quantum phenomena in heterogeneous systems.

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Charge and energy transfer of quantum emitters in 2D heterostructures

Cited by 20 publications

References 36 publications

Quantum Energy and Charge Transfer at Two-Dimensional Interfaces

Quantum Energy and Charge Transfer at Two-Dimensional Interfaces

Liquid-activated quantum emission from native hBN defects for nanofluidic sensing

Decomposition and embedding in the stochastic $GW$ self-energy

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