Characterizations of Mg Implanted GaN

Chi, Gou–Chung; Pong, B. J.; Pan, C.-C.; Teng, Yu-Jie; Lee, C. H.

doi:10.1557/proc-482-1027

Cited by 4 publications

(4 citation statements)

References 10 publications

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“…As a result of ion implantation, a peak at lower angle with respect to GaN (0002) appeared. Such an effect was observed also by other authors for GaN implantated with Mg, Ar, Be or Ca ions [19][20][21][22] . At low ion fluences it is attributed to GaN lattice expansion caused by displacement of atoms and/or creation of small dislocation loops.…”

Section: Resultssupporting

confidence: 81%

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The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs

Grabowski

Grzanka

et al. 2021

Sci Rep

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The aim of this paper is to give an experimental evidence that point defects (most probably gallium vacancies) induce decomposition of InGaN quantum wells (QWs) at high temperatures. In the experiment performed, we implanted GaN:Si/sapphire substrates with helium ions in order to introduce a high density of point defects. Then, we grew InGaN QWs on such substrates at temperature of 730 °C, what caused elimination of most (but not all) of the implantation-induced point defects expanding the crystal lattice. The InGaN QWs were almost identical to those grown on unimplanted GaN substrates. In the next step of the experiment, we annealed samples grown on unimplanted and implanted GaN at temperatures of 900 °C, 920 °C and 940 °C for half an hour. The samples were examined using Photoluminescence, X-ray Diffraction and Transmission Electron Microscopy. We found out that the decomposition of InGaN QWs started at lower temperatures for the samples grown on the implanted GaN substrates what provides a strong experimental support that point defects play important role in InGaN decomposition at high temperatures.

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Section: Resultssupporting

confidence: 81%

“…8 ). It means that strain due to the defects presence in implanted GaN has been removed during growth of the MQWs 19 . However, intensities of the higher order oscillations (4th and 5th) are lower in case of MQWs grown on implanted layer (Fig.…”

Section: Resultsmentioning

confidence: 99%

The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs

Grabowski

Grzanka

et al. 2021

Sci Rep

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“…In several works on Mg-implanted GaN, the UVL band and a green luminescence band were observed [42][43][44]. The position and shape of the dominant green band are nearly identical to those of the GL2 band, yet detailed investigations were not conducted in these works.…”

Section: The Yl and Gl2 Bands In Mg-doped Ganmentioning

confidence: 99%

“…The position and shape of the dominant green band are nearly identical to those of the GL2 band, yet detailed investigations were not conducted in these works. The samples were grown by HVPE [43], or MOCVD [41,44], and after the Mg implantation and rapid annealing, no p-type behavior could be obtained because of compensation with some donors. The BL band was not observed in these samples, which agrees with our assumption that the BL band is related to defects containing hydrogen.…”

Section: The Yl and Gl2 Bands In Mg-doped Ganmentioning

confidence: 99%

Green luminescence in Mg-doped GaN

et al. 2014

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A majority of the point defects in GaN that are responsible for broad photoluminescence (PL) bands remain unidentified. One of them is the green luminescence band (GL2) having a maximum at 2.35 eV which was observed previously in undoped GaN grown by molecular-beam epitaxy in Ga-rich conditions. The same PL band was observed in Mg-doped GaN, also grown in very Ga-rich conditions. The unique properties of the GL2 band allowed us to reliably identify it in different samples. The best candidate for the defect which causes the GL2 band is a nitrogen vacancy (V N). We propose that transitions of electrons from the conduction band to the +/2+ transition level of the V N defect are responsible for the GL2 band in high-resistivity undoped and Mg-doped GaN.

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Cu IONS IRRADIATION IMPACT ON STRUCTURAL AND OPTICAL PROPERTIES OF GaN THIN FILM

Shah

Husnain

Ahmad

et al. 2013

Int. J. Mod. Phys. B

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Epitaxial grown Gallium nitride ( GaN ) thin film on sapphire was irradiated with Cu ions at various fluences (5×1014, 1 ×1015 and 5×1015 cm -2). The level of lattice disorder, as measured by Rutherford backscattering spectrometry and channeling (RBS/C), gradually increases with the increasing of ions fluence. Lattice amorphization is observed for the sample irradiated with fluence of 5×1015 cm -2 which is also confirmed by X-ray diffractometer (XRD) analysis. It was found that both Raman modes of GaN layer clearly shifted with Cu + fluences. Both Raman and X-ray analyses explore that Cu atom substituted into Ga sites. Atomic force microscopy (AFM) images show the irradiated GaN surface roughness increases with the increasing ions fluence. The UV-visible transmittance spectrum and ellipsometric measurements show a decrease in the band gap value after irradiation of Cu ions in the GaN film. Moreover, the optical constants (n and k) of the films vary with the increasing of Cu ion fluences.

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Characterizations of Mg Implanted GaN

Cited by 4 publications

References 10 publications

The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs

The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs

Green luminescence in Mg-doped GaN

Cu IONS IRRADIATION IMPACT ON STRUCTURAL AND OPTICAL PROPERTIES OF GaN THIN FILM

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