2009
DOI: 10.1016/j.tsf.2009.03.194
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Characterizations of gallium-doped ZnO films on glass substrate prepared by atmospheric pressure metal-organic chemical vapor deposition

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Cited by 41 publications
(13 citation statements)
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“…power incensement [33,45]. Moreover, power rise can accelerate the movement of charged particles to the substrate surface [22]. The electrical resistivity of the thin films based on surface thickness and grain boundary scattering [46].…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…power incensement [33,45]. Moreover, power rise can accelerate the movement of charged particles to the substrate surface [22]. The electrical resistivity of the thin films based on surface thickness and grain boundary scattering [46].…”
Section: Resultsmentioning
confidence: 99%
“…These thin films can be achieved by using various methods such as solegel [18,19], chemical spray pyrolysis [20,21], chemical vapor deposition [22], plasma enhanced metalorganic chemical vapor deposition (PEMOCVD) [23], pulsed laser deposition [24e26] and magnetron sputtering [27e30]. In most of these techniques extra heating systems are used to achieve low resistivity with high transmittance.…”
Section: Introductionmentioning
confidence: 99%
“…Huang et al suggested a temperature of 500°C as optimal, but this was for gallium-doped films [7]. Other papers using the slower-to-oxidize butanol suggested optimal temperatures in the 400s [8][9], but our samples were grown using pure oxygen source and different pressure.…”
Section: A Growth Rate Observationsmentioning
confidence: 86%
“…Despite the facts that ZnO is one of the best candidates for future devices due to its direct bandgap tenability, natural abundance, low toxicity, highly stable wurtzite structure, large piezoelectric and pyroelectric coefficients, and richest nanostructural configuration, growth of ZnO films and nanostructures is still in primary stage. Semiconductors community still lacks consensus on the optimized parameters of ZnO growth using MOCVD [7][8][9][10][11]. Extensive efforts are needed to investigate the dynamics during ZnO growth using specific precursors, substrates, and carrier gas to find an optimized window of the growth parameters.…”
Section: Introductionmentioning
confidence: 99%
“…Less attention has been paid to the growth of ZnO from zinc acetate [13] and zinc acetylacetonate ((C 5 H 8 O 2 ) 2 or Zn(acac) 2 ) [14][15][16][17]. However, zinc acetate and Zn(acac) 2 have the advantages of being commercially available and thus being rather cheap.…”
Section: Introductionmentioning
confidence: 99%