Characterization Scheme for Plasma-Induced Defect Creation due to Stochastic Lateral Straggling in Si Substrates for Ultra-low Leakage Devices

Sato, Yoshiaki; Yamada, T.; Nishimura, Kazuko; Yamasaki, Masayuki; Murakami, Masashi; Urabe, Keiichiro; Eriguchi, Koji

doi:10.1109/iedm13553.2020.9372074

Cited by 2 publications

(7 citation statements)

References 8 publications

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“…The alignment accuracy in patterning contact holes in connection to the n-type region was controlled within 5 nm. The detailed process conditions for fabricating devices with p-n junctions were published elsewhere [18], [26]. An oxide film (thickness: 60 nm) was etched with CH4/CHF3/Ar/O2 plasma generated by a microwave at 2.45 GHz.…”

Section: Methodsmentioning

confidence: 99%

“…Defects are created in the lateral direction during plasma processing due to the stochastic lateral straggling of the incident ions, in addition to the vertical direction. Hence, the defect density in the lateral direction is significantly smaller than that in the vertical direction [26].…”

Section: Defect Characterizationmentioning

confidence: 96%

“…Sato et al reported that Ileak and Idark are primarily composed of the SRH generation current (ISRH) and trap-assisted tunneling (TAT) current (ITAT) [26]. Moreover, the Ileak can be expressed using ISRH and ITAT as follows:…”

Section: B Energy Level and Density Of Lateral Ppd B1 Carrier Conduct...mentioning

confidence: 99%

“…For example, Sato et al proposed a single device structure with various p-n junction widths for the assessment of the lateral PPD in the case of a short turnaround time [18]. In addition, a CIS structure was employed to clarify the influence of the lateral PPD on the increase in Idark [26]. It is therefore necessary to determine the relationship between the performance change in a simple structure and that in large-scale devices, such as ultralarge-scale integration (ULSI) and CIS circuits.…”

mentioning

confidence: 99%

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Characterization of Plasma Process-Induced Low-Density Defect Creation by Lateral Junction Leakage

Sato

Shibata

Yamada

et al. 2022

IEEE J. Electron Devices Soc.

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In the design of ultralow leakage devices such as image sensors, it is necessary to understand the influence of low-density defects during plasma processing-plasma-induced physical damage (PPD)-on device performance. Defects created by plasma exposure act as carrier conduction sites and induce an increase in leakage (e.g., dark) current. This study proposes a PPD evaluation scheme for low-density defect assessments, specifically defects created in the lateral direction due to lateral stochastic straggling (lateral PPD). Two test structures were designed: a single device with a leakage current (Ileak) and a complementary metal-oxide-semiconductor image sensor (CIS) circuit with a dark current (Idark). The energy level and density of defects distributed in the lateral direction were estimated using the Shockley-Read-Hall (SRH) model. The energy level (Et) was derived using the SRH model from the temperature dependence of Ileak and Idark defined as the activation energy Ea. The trap density (Nt) was also determined. A comprehensive comparison of these parameters was conducted. Both Ileak and Idark are dependent on the contact opening diameter after plasma exposure, which implies the presence of defects in the lateral direction via lateral PPD. From the analysis of the temperature dependence of Ileak and Idark, the lateral PPD influenced the mean value of Ea. Moreover, we confirmed that an increase in Idark indicates an increase in the number of trap sites, and more specifically, an increase in defects at shallow levels. The derived trap site density in the CIS circuit was consistent with that of a single device. The proposed evaluation scheme is useful for PPD evaluation in the presence of low-density defects, and is critical for the design of future lowleakage devices.

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Section: Methodsmentioning

confidence: 99%

Section: Defect Characterizationmentioning

confidence: 96%

Section: B Energy Level and Density Of Lateral Ppd B1 Carrier Conduct...mentioning

confidence: 99%

mentioning

confidence: 99%

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Characterization of Plasma Process-Induced Low-Density Defect Creation by Lateral Junction Leakage

Sato

Shibata

Yamada

et al. 2022

IEEE J. Electron Devices Soc.

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“…Recently, this predicted phenomenon was experimentally verified. 44,147) An increase in pn junction leakage current was identified using devices with lateral pn junctions.…”

Section: Ppd Range Theory and Device Performance Degradationmentioning

confidence: 99%

Characterization techniques of ion bombardment damage on electronic devices during plasma processing—plasma process-induced damage

Eriguchi

2021

Jpn. J. Appl. Phys.

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Plasma processing plays an important role in manufacturing leading-edge electronic devices such as ULSI circuits. Reactive ion etching achieves fine patterns with anisotropic features in metal-oxide-semiconductor field-effect transistors (MOSFETs). In contrast, it has been pointed out over the last four decades that plasma processes not only modify the surface morphology of materials but also degrade the performance and reliability of MOSFETs as a result of defect generation in materials such as crystalline Si substrate and dielectric films. This negative aspect of plasma processing is defined as plasma (process)-induced damage (PID) which is categorized mainly into three mechanisms, i.e. physical, electrical, and photon-irradiation interactions. This article briefly discusses the modeling of PID and provides historical overviews of the characterization techniques of PID, in particular, by the physical interactions, i.e. ion bombardment damage.

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Characterization Scheme for Plasma-Induced Defect Creation due to Stochastic Lateral Straggling in Si Substrates for Ultra-low Leakage Devices

Cited by 2 publications

References 8 publications

Characterization of Plasma Process-Induced Low-Density Defect Creation by Lateral Junction Leakage

Characterization of Plasma Process-Induced Low-Density Defect Creation by Lateral Junction Leakage

Characterization techniques of ion bombardment damage on electronic devices during plasma processing—plasma process-induced damage

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