Characterization of ZnS thin films synthesized through a non-toxic precursors chemical bath

Rodríguez, Carlos Aníbal; Sandoval-Paz, M.G.; Cabello, G.; Flores, Marcos; Fernández, H. Moreno; Carrasco, Claudia

doi:10.1016/j.materresbull.2014.08.047

Cited by 38 publications

(19 citation statements)

References 36 publications

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“…Broad diffractions peaks represent the nano‐crystallinity of the films rather than the deposition of amorphous material, as reported previously by several authors . The average crystallite size in the case of ZnS deposition was 9.09 nm and is close to that observed by Man and Lee .…”

Section: Resultssupporting

confidence: 87%

Nanocrystalline and monophasic thin films of metal chalcogenide (FeS, ZnS) and oxide (ZnO) by chemical bath deposition (CBD)

Akhtar

Mehmood

Ahmad

et al. 2017

Phys. Status Solidi A

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FeS, ZnS, and ZnO nanostructured thin films have been deposited by Chemical Bath Deposition (CBD), a simple and cost effective technique. These materials with different morphologies such as nano‐flakes, nanoparticles and nanorods for FeS, ZnS, and ZnO, respectively were deposited onto the glass substrates. The crystallite sizes have been estimated from Scherrer's equation and were found to be 14 nm for nano‐flakes of FeS, 9.09 nm for nanoparticles of ZnS, and 49 nm for nanorods of ZnO. The average values of the band gaps were found to be 1.97, 3.43, and 3.74 eV for FeS, ZnO, and ZnS thin films, respectively. These nanostructured semiconducting materials have wide applications in advanced optoelectronic devices.

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Section: Resultssupporting

confidence: 87%

Nanocrystalline and monophasic thin films of metal chalcogenide (FeS, ZnS) and oxide (ZnO) by chemical bath deposition (CBD)

Akhtar

Mehmood

Ahmad

et al. 2017

Phys. Status Solidi A

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“…MSPLD films are the most stable for annealing treatments with regard to maintaining the c-ZnS to h-ZnS ratio. The band gap values obtained for the films are slightly smaller than the expected band gaps for bulk ZnS (E g = 3.6 eV [60]) and h-ZnS films (E g = 3.91 eV), but comparable to polycrystalline c-ZnS films (E g between 3.29 and 3.79) [61][62][63][64]. Moreover, the as-deposited MS film has a band gap close to the reported value of the amorphous ZnS films (E g = 3.4 eV) [65].…”

Section: Discussioncontrasting

confidence: 56%

The Effect of the Deposition Method on the Structural and Optical Properties of ZnS Thin Films

et al. 2021

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ZnS is a wide band gap material which was proposed as a possible candidate to replace CdS as a buffer layer in solar cells. However, the structural and optical properties are influenced by the deposition method. ZnS thin films were prepared using magnetron sputtering (MS), pulsed laser deposition (PLD), and a combined deposition technique that uses the same bulk target for sputtering and PLD at the same time, named MSPLD. The compositional, structural, and optical properties of the as-deposited and annealed films were inferred from Rutherford backscattering spectrometry, X-ray diffraction, X-ray reflectometry, Raman spectroscopy, and spectroscopic ellipsometry. PLD leads to the best stoichiometric transfer from target to substrate, MS makes fully amorphous films, whereas MSPLD facilitates obtaining the densest films. The study reveals that the band gap is only slightly influenced by the deposition method, or by annealing, which is encouraging for photovoltaic applications. However, sulphur vacancies contribute to lowering the bandgap and therefore should be controlled. Moreover, the results add valuable information towards the understanding of ZnS polymorphism. The combined MSPLD method offers several advantages such as an increased deposition rate and the possibility to tune the optical properties of the obtained thin films.

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“…It was reported by several authors that the peak positions for the wurtzite or sphalerite phases of ZnS thin films shifted from the typical positions. This difference may be proceeding from the lattice expansion or distortion due to the new phases of impurities or intrinsic defects such as vacancies and interstitials [34][35][36][37][38][39]. It was shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Influences of annealing temperature and thickness on ZnS buffer layers for inverted hybrid solar cells

et al. 2016

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Characterization of ZnS thin films synthesized through a non-toxic precursors chemical bath

Cited by 38 publications

References 36 publications

Nanocrystalline and monophasic thin films of metal chalcogenide (FeS, ZnS) and oxide (ZnO) by chemical bath deposition (CBD)

Nanocrystalline and monophasic thin films of metal chalcogenide (FeS, ZnS) and oxide (ZnO) by chemical bath deposition (CBD)

The Effect of the Deposition Method on the Structural and Optical Properties of ZnS Thin Films

Influences of annealing temperature and thickness on ZnS buffer layers for inverted hybrid solar cells

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