Characterization of ZnO thin films grown on various substrates by RF magnetron sputtering

Lee, Kyu-Hang; Cho, Nam-In; Yun, Eui‐Jung; Nam, Hyoung Gin

doi:10.1016/j.apsusc.2010.02.009

Cited by 21 publications

(8 citation statements)

References 31 publications

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“…The RT and LT PL spectra confirmed both V Zn and O i existed in the p‐type ZnO thin film, and V Zn was the main acceptor defect. The native defects behaved similar to the report of Lee et al .…”

Section: Resultssupporting

confidence: 88%

Stable p‐type ZnO thin films on sapphire and n‐type 4H‐SiC achieved by controlling oxygen pressure using radical‐source laser molecular beam epitaxy

Zhang

et al. 2015

Physica Status Solidi (a)

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Stable p‐type ZnO thin films on sapphire (0001) and n‐type 4H‐SiC (0001) substrates were achieved in low‐ionized oxygen pressure using radical‐source laser molecular beam epitaxy system. The p conduction type of ZnO films originates from not only zinc vacancy, but also interstitial oxygen acceptor defects, which was investigated by X‐ray diffraction, atomic force microscopy, X‐ray photoelectron spectroscopy, and photoluminescence measurements. The electrical properties were tested 180 days after deposition by Hall measurement. For the ZnO thin film grown on sapphire, a stable mobility of 17.0 cm2 V−1s−1, a resistivity of 1.08 Ωcm, and a hole concentration of 3.4 × 1017 cm−3 were achieved. The selection of 4H‐SiC substrates improved the crystalline quality of ZnO films confirmed by the X‐ray diffraction patterns. An intrinsic p‐type ZnO film on n‐type 4H‐SiC, with a stable mobility of 44.6 cm2 V−1s−1, a resistivity of 1.02 Ωcm, and a hole concentration of 1.4 × 1017 cm−3 were achieved. The current–voltage curve of the p–n ZnO homojunction shows typical diode characteristics, which also confirmed the achievement of the p‐type ZnO. The current–voltage curve of the p‐ZnO/n‐4H‐SiC heterojunction also shows p–n junction rectifier features. These results suggest the possibility of ultraviolet photodetectors and light‐emitting devices.

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Section: Resultssupporting

confidence: 88%

Stable p‐type ZnO thin films on sapphire and n‐type 4H‐SiC achieved by controlling oxygen pressure using radical‐source laser molecular beam epitaxy

Zhang

et al. 2015

Physica Status Solidi (a)

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“…The PL characteristics of present ZITO films presented three distinct emissions in a violet luminescence at 2.95 eV, three green luminescence peaks at 2.41 eV, 2.31 eV and 2.28 eV and two red luminescence peaks at 1.79 eV and 1.75 eV. The violet luminescence can be attributed to the interface traps present at the depletion region near the grain boundaries [29]. The green luminescence originated from the recombination of the holes with the single ionized charge of oxygen-vacancy (V 0 + ) [30,31].…”

Section: Semiconducting Zito Film (Zn Atomic Concentration Ratio Of 6mentioning

confidence: 87%

A study on crystallization, optical and electrical properties of the advanced ZITO thin films using co-sputtering system

Chen

Hung

Chang

et al. 2011

Journal of Alloys and Compounds

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“…Until now, several strategies have been followed to deposit thin zinc oxide films, including wet chemical methods like sol-gel deposition [10] and spray pyrolysis [11]. Also physical vapour deposition, such as rf-magnetron sputtering [12] and molecular beam epitaxy (MBE), or chemical vapour deposition (CVD) have been used. A brief review of the latter technique is given in Ref.…”

Section: Introductionmentioning

confidence: 99%

Using the acetylacetonates of zinc and aluminium for the Metalorganic Chemical Vapour Deposition of aluminium doped zinc oxide films

Nebatti

Pflitsch

Curdts

et al. 2015

Materials Science in Semiconductor Processing

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Characterization of ZnO thin films grown on various substrates by RF magnetron sputtering

Cited by 21 publications

References 31 publications

Stable p‐type ZnO thin films on sapphire and n‐type 4H‐SiC achieved by controlling oxygen pressure using radical‐source laser molecular beam epitaxy

Stable p‐type ZnO thin films on sapphire and n‐type 4H‐SiC achieved by controlling oxygen pressure using radical‐source laser molecular beam epitaxy

A study on crystallization, optical and electrical properties of the advanced ZITO thin films using co-sputtering system

Using the acetylacetonates of zinc and aluminium for the Metalorganic Chemical Vapour Deposition of aluminium doped zinc oxide films

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