Characterization of ZnO and ZnO:Al thin films deposited by the sol–gel dip-coating technique

Marotti, Ricardo E.; Bojorge, Claudia Daniela; Broitman, Esteban; Cánepa, Horacio Ricardo; Badan, J.; Dalchiele, Enrique A.; Gellman, Andrew J.

doi:10.1016/j.tsf.2008.06.028

Cited by 50 publications

(17 citation statements)

References 17 publications

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“…The band gap of the sample thus obtained comes out to be 3.43 eV. This value is higher than that reported by Keskenler et al [13], Marotti et al [27] and Srinivasan and Kumar [28]. They found the optical band gap of ZnO film on p-type silicon prepared with solgel spin coating method to be equal to 3.27 eV.…”

Section: Energy Band Gap Evaluationmentioning

confidence: 43%

Growth and temperature dependent characterization of pulsed laser deposited Ag/n-ZnO/p-Si/Al heterojunction

Kumar

Chand

2014

J Mater Sci: Mater Electron

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The Ag/n-ZnO/p-Si(100)/Al heterojunction diodes were fabricated by pulsed laser deposition of zinc oxide (ZnO) thin films on p-type silicon. The X-ray diffraction analysis shows the formation of ZnO thin film with hexagonal structure having strong (002) plane as preferred orientation. The energy band gap of ZnO films simultaneously deposited on quartz substrate was calculated from the measured UV-Visible transmittance spectra. High purity vacuum evaporated silver and aluminum thin films were used to make contacts to the n-ZnO and p-silicon, respectively. The current-voltage and capacitance-voltage characteristics of Ag/n-ZnO/p-Si(100)/Al heterostructures were measured over the temperature range of 80-300 K. The Schottky barrier height and ideality factor were determined by fitting of the measured current-voltage data into thermionic emission diffusion equation. It is observed that the barrier height decreases and the ideality factor increases with decrease of temperature and the activation energy plot exhibit non-linear behavior. This decrease in barrier height and increase in ideality factor at low temperature are attributed to the occurrence Gaussian distribution of barrier heights. The capacitance-voltage characteristics of Ag/n-ZnO/p-Si(100)/Al heterojunction diode were also studied over the wide temperature range. Capacitance-voltage data are used to estimate the barrier height and impurity concentration in n-type ZnO.

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Section: Energy Band Gap Evaluationmentioning

confidence: 43%

Growth and temperature dependent characterization of pulsed laser deposited Ag/n-ZnO/p-Si/Al heterojunction

Kumar

Chand

2014

J Mater Sci: Mater Electron

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“…5. We have recently confirmed this assumption by, to our knowledge, the only temperature programmed desorption (TPD) experiment of water on nanocrystalline ZnO TF [6].…”

Section: Water Adsorptionmentioning

confidence: 59%

“…Both publications have stressed the synthesis and application of nanostructured ZnO, such as NWs, nanorods, and nanobelts, because their morphologies and properties can be modified and controlled through synthesis. Size reduction in nanostructured ZnO materials lead to quantum confinement effects, which in turn impart novel electrical, mechanical, chemical, and optical properties to ZnO [6,7,8]. Another example is the application in photovoltaic solar cells, where the morphology of NW arrays has been observed to improve both the light collection and charge extraction [9,10].…”

Section: Introductionmentioning

confidence: 99%

Comparative study on the properties of ZnO nanowires and nanocrystalline thin films

Broitman

Bojorge

Elhordoy³

et al. 2012

Surface and Coatings Technology

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The microstructural, morphological, optical and water-adsorption properties of nanocrystalline ZnO thin films and ZnO nanowires were studied and compared. The ZnO thin films were obtained by a sol–gel process, while the ZnO nanowires were electrochemically grown onto a ZnO sol–gel spin-coated seed layer. Thin films and nanowire samples were deposited onto crystalline quartz substrates covered by an Au electrode, able to be used in a quartz crystal microbalance. X-ray diffraction measurements reveal in both cases a typical diffraction pattern of ZnO wurtzite structure. Scanning electron microscopic images of nanowire samples show the presence of nanowires with hexagonal sections, with diameters ranging from 30 to 90 nm. Optical characterization reveals a bandgap energy of 3.29 eV for the nanowires and 3.35 eV for the thin films. A quartz crystal microbalance placed in a vacuum chamber was used to quantify the amount and kinetics of water adsorption onto the samples. Nanowire samples, which have higher surface areas than the thin films, adsorb significantly more water

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“…5). The E g value of 3.27 eV was determined to be the same as in previous reports [33,34]. The background electronic concentrations of ZnO semiconductor thin films must be reduced in order to reduce the off-state drain current and to increase ZnO-TFTs carrier mobility [35].…”

Section: Resultsmentioning

confidence: 93%

Effect of preheating process on crystallization and optical properties of sol-gel derived ZnO semiconductor thin films

et al. 2010

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Highly transparent ZnO semiconductor thin films were deposited onto alkali-free glass substrates by a sol-gel spin coating process. This research investigated the effects of different preheating rates (4 or 10°C/min) on the various surface morphologies, crystallization characteristics, and optical properties of these thin films. The ZnO sol was synthesized by dissolving the zinc acetate dihydrate in isopropanol (IPA), and then adding monoethanolamine (MEA). These as-coated films were preheated at 300°C for 10 min and annealed in an air ambiance at 500°C for 1 h. Experimental results revealed that the as-prepared films had a hexagonal wurtzite structure, and that the heating rates of the preheating process obviously affected the surface morphologies, crystallization qualities, and transparency levels of the thin films. A ZnO thin film preheated at 10°C/min exhibited preferential orientation along the (002) plane, a flat surface, and also achieved a high transmittance value, 92.5%, for light with a wavelength of 550 nm.

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Characterization of ZnO and ZnO:Al thin films deposited by the sol–gel dip-coating technique

Cited by 50 publications

References 17 publications

Growth and temperature dependent characterization of pulsed laser deposited Ag/n-ZnO/p-Si/Al heterojunction

Growth and temperature dependent characterization of pulsed laser deposited Ag/n-ZnO/p-Si/Al heterojunction

Comparative study on the properties of ZnO nanowires and nanocrystalline thin films

Effect of preheating process on crystallization and optical properties of sol-gel derived ZnO semiconductor thin films

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