2000
DOI: 10.1016/s0040-6090(00)01321-3
|View full text |Cite
|
Sign up to set email alerts
|

Characterization of ultra-hard silicon carbide coatings deposited by RF magnetron sputtering

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
30
1

Year Published

2005
2005
2012
2012

Publication Types

Select...
4
3

Relationship

0
7

Authors

Journals

citations
Cited by 76 publications
(40 citation statements)
references
References 16 publications
0
30
1
Order By: Relevance
“…The sputtered a-SiC film provided conformal coverage for bulk micromachined Si cavities and steps. Other work [131] featuring the same a-SiC deposition technique centered on elevating the target temperature as well as varying Ar pressures, with subsequent studies focused on annealing [132]. In addition to these examples, PVD-based variants include reactive magnetron sputtering in hydrogen with a heated substrate [130], RF reactive sputtering in CH 4 [135], triode sputtering [111,129], laser ablation [111,113,136], pulsed laser deposition [112], molecular beam epitaxy [137], and ion-beam synthesis [137].…”
Section: Materials Preparationmentioning
confidence: 99%
“…The sputtered a-SiC film provided conformal coverage for bulk micromachined Si cavities and steps. Other work [131] featuring the same a-SiC deposition technique centered on elevating the target temperature as well as varying Ar pressures, with subsequent studies focused on annealing [132]. In addition to these examples, PVD-based variants include reactive magnetron sputtering in hydrogen with a heated substrate [130], RF reactive sputtering in CH 4 [135], triode sputtering [111,129], laser ablation [111,113,136], pulsed laser deposition [112], molecular beam epitaxy [137], and ion-beam synthesis [137].…”
Section: Materials Preparationmentioning
confidence: 99%
“…In particular, the clustering of ring structures in the film increases as the ratio of sp 2 bonding increases. The increase in ring and chain structures caused by an increase in sp 2 bonding results in a more porous film. Also, Si-H and C-H bonds, which exist more with a plasma power of 200 W than in the film deposited at a plasma power of 300 W, make the deposited film more porous.…”
Section: )7)mentioning
confidence: 99%
“…Recently, many deposition methods for SiC processes, including CVD, 1) sputtering, 2) and PECVD, 3) have been researched and developed by various research groups. In general, SiC thin films deposited by plasma enhanced chemical vapor deposition (PECVD) at low temperatures show amorphous 4) and hydrogenated properties in between the properties of organic and inorganic polymers, since source gases are decomposed to complex mixtures of monomers under plasma which react on the substrate at low temperatures.…”
Section: Introductionmentioning
confidence: 99%
“…[7] There is a significant interest in the synthesis of SiC nanostructures as novel functional materials for nanoscale engineering. [8,9,10] Recently, SiC films have been produced through a variety of methods such as plasma-enhanced (PE) CVD, [11] magnetron sputtering, [12,13] and ion-beam sputtering. [14] For example, Rao et al [15] produced SiC films by application of hybrid thermal plasma with an RF induction field superimposed on a DC arc jet.…”
Section: Synthesis Of Nanostructured Silicon Carbidementioning
confidence: 99%