1992
DOI: 10.1103/physrevb.46.2460
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Characterization of tin oxides by x-ray-photoemission spectroscopy

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Cited by 344 publications
(262 citation statements)
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“…The total EDOS shows that CsCl structured SnO has no band gap with a low density of states across the Fermi energy indicating that it is semi-metallic while litharge structured SnO has a small band gap of 0.6 eV. This is in line with x-ray photoelectron spectroscopy 19 which shows that on reduction of SnO 2 , which has a band gap of 3.6 eV, additional features that are attributed to the Sn 5s states appear close to the Fermi level, giving rise to a much smaller gap between the occupied and unoccupied states. Recent photoemission spectra 20 has also studied the valence states of SnO and again show a small band gap with a significant contribution of the Sn 5s to the states just below the Fermi level.…”
Section: Electronic Structure Of Snosupporting
confidence: 65%
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“…The total EDOS shows that CsCl structured SnO has no band gap with a low density of states across the Fermi energy indicating that it is semi-metallic while litharge structured SnO has a small band gap of 0.6 eV. This is in line with x-ray photoelectron spectroscopy 19 which shows that on reduction of SnO 2 , which has a band gap of 3.6 eV, additional features that are attributed to the Sn 5s states appear close to the Fermi level, giving rise to a much smaller gap between the occupied and unoccupied states. Recent photoemission spectra 20 has also studied the valence states of SnO and again show a small band gap with a significant contribution of the Sn 5s to the states just below the Fermi level.…”
Section: Electronic Structure Of Snosupporting
confidence: 65%
“…It is this shift in energy that gives rise to the small band gap and corresponds to the Sn 5s character seen experimentally just below the top of the valence band. 19,20 The difference between the two EDOS is close to the Fermi surface where there is some Sn 5s character but the majority of it is involved in bonding interaction with O 2p between Ϫ9 and Ϫ6 eV. Partial electron density maps have been made for energy ranges of the EDOS.…”
Section: Electronic Structure Of Snomentioning
confidence: 99%
“…Although Ar + ion etching could change the film composition by preferentially ejecting O atoms, the effect would result in only 30∼40% of the Sn being converted. 14 Therefore, some SnO must have existed in the film prior to etching.…”
Section: Resultsmentioning
confidence: 99%
“…However, as it is well-known, only the position of Sn 3d 5/2 peak is not sufficient to determine the presence of Sn 4+ or Sn 2+ species. [6] More information can be extracted from the stoichiometric ratio Sn/O ox. , ( [7] confirms the nonstoichiometry of the SnO x nanowires.…”
Section: Chemical Composition -Sno 2 Nanowiresmentioning
confidence: 99%