Characterization of thermal cross-talk in a MEMS-based thermopile detector array

Wu, H.; Grabarnik, S.; Emadi, A.; Graaf, G. de; Wolffenbuttel, R.F.

doi:10.1088/0960-1317/19/7/074022

Cited by 39 publications

(28 citation statements)

References 6 publications

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“…The voltage bias also varied from -5V to 5V with steps of 0.1V. According to the equations in previous literatures [6][7][8] the Rs and D* are derived. The derived Rs of the n-type thermopile without vacuum is 31.9 V/W.…”

Section: A Characterization Of the Conventional Planar Thermopilementioning

confidence: 99%

CMOS-based thermopiles using vertically integrated double polycrystalline silicon layers

Zhou

Kropelnicki

Tsai

et al. 2013

2013 IEEE 26th International Conference on Micro Electro Mechanical Systems (MEMS)

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Section: A Characterization Of the Conventional Planar Thermopilementioning

confidence: 99%

CMOS-based thermopiles using vertically integrated double polycrystalline silicon layers

Zhou

Kropelnicki

Tsai

et al. 2013

2013 IEEE 26th International Conference on Micro Electro Mechanical Systems (MEMS)

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“…The thermo-electric elements are N-and P-type doped thin-film polysilicon wires. Details of the fabrication of these devices can be found in [6] [7]. The thickness of the membrane and thennopile strips is typically a few hundred nanometers.…”

Section: General Thermal Analysis Of a Thin Film Beammentioning

confidence: 99%

“…Measurements on thermopile arrays have been reported in [6] and more tests of the thermopile and TCD devices are in progress to verifY their operation and the thermal modeling presented, Figure 9 Since accurately calibrated gas mixtures were not available the relation between the thermopile output voltage and the gas thermal conductivity could not be experimentally verified.…”

Section: Measurementsmentioning

confidence: 99%

A model for static and dynamic thermal analysis of thin film MEMS structures including the thermal conductivity of the surrounding gas

Graaf

Wolffenbuttel

2011

2011 12th Intl. Conf. On Thermal, Mechanical &Amp; Multi-Physics Simulation and Experiments in Microelectronics and Microsystem

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In this work an analytical model for static and dynamic thermal analysis of heated thin bridges, membranes or cantilevers is presented. The analysis includes the thermal conductivity of the surrounding gas, which cannot be neglected in most MEMS devices. The model is based on Laplace transformation of the heat equations and on the Thermal Quadrupole Method. A one-dimensional approximation using these methods results in practical sets of equations that can be roughly evaluated by hand for feasibility studies of a design. Further evaluation can be done by some basic matrix operations, e.g. analytically by Mathematica or numerically using MATLAB. Plots of these functions can provide the designer with insight on the thermal behavior of the structure, without the use of finite element calculations.

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“…The thermal transfer due to these three mechanisms acting on the TE element is described in detail in literature 5 . An array of 26 TE elements, each on a bridge structure of 650×36 μm 2 is designed and fabricated.…”

Section: Introductionmentioning

confidence: 99%

Thin film encapsulated 1D thermoelectric detector in an IR microspectrometer

Emadi

Graaf

et al. 2010

Optical Sensing and Detection

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A thermopile-based detector array for use in a miniaturized Infrared (IR) spectrometer has been designed and fabricated using CMOS compatible MEMS technology. The emphasis is on the optimal of the detector array at the system level, while considering the thermal design, the dimensional constraints of a design on a chip and the CMOS compatibility. The resolving power is maximized by spacing the Thermo-Electric (TE) elements at an as narrow as possible pitch, which is limited by processing constraints. The large aspect ratio of the TE elements implies a large cross-sectional area between adjacent elements within the array and results in a relatively large lateral heat exchange between micromachined elements by thermal diffusion. This thermal cross-talk is about 10% in case of a gap spacing of 10 μm between elements. Therefore, the detector array should be packaged (and operated) in vacuum in order to reduce the cross-talk due to the air conduction through the gap. Thin film packaging is a solution to achieve an operating air pressure at 1.3 mBar, which reduces the cross-talk to 0.4%. One of other advantages of having low operating pressure is the increased sensitivity of single TE element. An absorber based on an optical interference filter design is also designed and fabricated as an IC compatible post-process on top the detector array. The combination of the use of CMOS compatible materials and processing with high absorbance in 1.5 -5 μm wavelength range makes a complete on-chip microspectrometer possible.

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Characterization of thermal cross-talk in a MEMS-based thermopile detector array

Cited by 39 publications

References 6 publications

CMOS-based thermopiles using vertically integrated double polycrystalline silicon layers

CMOS-based thermopiles using vertically integrated double polycrystalline silicon layers

A model for static and dynamic thermal analysis of thin film MEMS structures including the thermal conductivity of the surrounding gas

Thin film encapsulated 1D thermoelectric detector in an IR microspectrometer

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