Characterization of the reaction process in diffusion-soldered Cu/In–48 at.% Sn/Cu joints

Effect of surface finish of substrate on mechanical reliability of In-48Sn solder joints in MOEMS package

“…6 In 17.0 (in at.%), corresponding to Cu 6 (Sn,In) 5 . Sommadossi et al reported that only Cu 6 (Sn,In) 5 IMC, having two different morphologies, was formed at the interface after bonding below 200 °C [14]. Laurila et al suggested that the needle-shaped IMC was formed by the rapid dissolution of Cu in the molten solder followed by the local constitutional supercooling of the molten solder [15].…”

Phase transformation and fracture behavior of Cu/In/Cu joints formed by solid–liquid interdiffusion bonding

“…Through this method, low-temperature bonding process can be achieved by depositing highmelting-point metal and low-melting-point solder at bonding areas. After bonding, the joint would only contain high-melting-point intermetallic compounds and hence it can withstand high temperature during the subsequent reflowing process, which can reduce the risk of thermal mismatch problems [5][6][7][8].…”

Interfacial reaction and mechanical properties for Cu/Sn/Ag system low temperature transient liquid phase bonding

“…Nowadays, high temperature packaging techniques, including Cu-Cu thermo-compression bonding [5], soldering with high-temperature solders like Au-Sn alloy [6], nano-silver particle sintering [7] and low temperature transient liquid phase (LTTLP) bonding, are all commonly recognized as potential candidates. However, LTTLP bonding, also called solid-liquid interdiffusion (SLID) bonding [8] and diffusion soldering [9], has been proven to be a promising approach in application to power devices. It is first investigated by Bernstein [10] in 1966, low melting point metal or alloy (i.e.…”

“…For the base metal, it is majorly focused on the Cu, Ag and Au series [9,[11][12][13][14][15][16][17][18][19], while researches on Ni, Pd and Pt have been also reported in recent years [20,21]. The primary criterion for selection of an interlayer is melting point and compatibility with base metal such as high solubility and high diffusivity.…”

“…Wherein, unitary system contains Sn (232°C) and In (156°C), and binary or ternary system includes In-Sn (120°C), In-Bi (89°C), Sn-Bi (139°C) and In-Sn-Bi (60°C) alloys [22]. In general, LTTLP bonding process is often conducted at temperatures higher than melting point of the interlayer by a range of 15-120°C, and bonding time mainly depends on the thickness of the interlayer [9,[15][16][17][18][19]. Most of studies concentrated on microstructure evolution [9,21,23], interfacial reaction [12,13,21], kinetics of the IMCs growth [12,13], thermal reliability [24,25], and electrical or mechanical behaviors of the joints [9,11,23] for above systems applied in electronic packaging and interconnects.…”