Characterization of the passivation of CdS thin films grown by chemical bath deposition on InP

Galán, Osvaldo Vigil; Larramendi, Julio Vidal; Riech, I.; Peña, G.; Iribarren, A.; Aguilar‐Hernández, J.; Contreras‐Puente, G.

doi:10.1088/0268-1242/17/11/311

Cited by 12 publications

(7 citation statements)

References 10 publications

(15 reference statements)

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“…Due to the direct and wide band gap of CdS semiconductor, CdS thin films have attracted much interest as a potential candidate for optoelectronic devices. They are used as a window layer in CuInSe or CdTe heterojunction based solar cells [5][6][7][8][9], field effect transistors [10][11][12], photodetectors [10], gas sensors [12] and light emitting diodes [13].…”

Section: Introductionmentioning

confidence: 99%

Growth and physical properties of CdS thin films prepared by chemical bath deposition

Moualkia

Hariech

Aida

et al. 2009

J. Phys. D: Appl. Phys.

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This work deals with the preparation of cadmium sulfide (CdS) thin films by chemical bath deposition. The influence of the solution temperature is investigated in this study. We suggest that activation energy of the deposition rate measurement can be a tool for determining the nature of the deposition mechanism. We found that at low solution temperature, the growth mechanism proceeds via the ion by ion process, and found the corresponding activation energy equal to 0.06 eV. However, at higher solution temperature, the film deposition became via the cluster by cluster process, the growth rate activation energy is equal to 0.48 eV. The films' structural and optical properties were studied by x-ray diffraction analysis and UV–visible spectrophotometry. Structural analysis revealed that the deposited films have a cubic structure, and the crystallite size decreases with increasing deposition temperature. The transmission spectra of the film, in the visible range, show a high transmission coefficient (70%). The transmittance data analysis indicates that the optical band gap is closely related to the solution temperature. From this analysis, a direct band gap ranging from 2.21 to 2.34 eV was deduced. From the electrical characterization we inferred that CdS films are n-type and their dark conductivities reduced with increasing bath solution temperature. From the photoconductivity measurements we concluded that films deposited at low temperatures (less than 60 °C) or high temperatures (higher than 70 °C) have good optoelectronic properties suitable for utilization as a buffer layer in thin film solar cells.

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Section: Introductionmentioning

confidence: 99%

Growth and physical properties of CdS thin films prepared by chemical bath deposition

Moualkia

Hariech

Aida

et al. 2009

J. Phys. D: Appl. Phys.

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“…CdS is an excellent window layer for thin film CdTe or CuInSe 2 based heterojunction solar cells [1][2][3][4][5][6]. The band gap of CdS thin film is ideal to match solar spectrum for a photovoltaic window layer.…”

Section: Introductionmentioning

confidence: 99%

Effect of ammonium sulphate on chemical bath deposition of CdS thin films

2004

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“…The amplitude of the signal as a function of the modulation frequency is shown in part ͑a͒ of the Fig. 13,[19][20][21][22][23] The values of the parameters used in the fit are shown in Table I. 4.…”

Section: Resultsmentioning

confidence: 99%

Influence of the thiourea/CdCl2 concentration ratio used for the chemical bath deposition of CdS thin films, upon the CdS/CdTe interface recombination velocity in CdTe/CdS/glass structures.

Marı́n

Santoyo

Calderón

et al. 2010

Journal of Applied Physics

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Modification of the optical reflectance spectra of epitaxial gallium arsenide by weak magnetic fields J. Appl. Phys. 112, 073513 (2012) Theoretical and experimental study of the optical absorption at longitudinal phonon or phonon-plasmon coupling mode energy: An example of GaN J. Appl. Phys. 112, 063531 (2012) Negative differential resistance associated with hot phonons J. Appl. Phys. 112, 063707 (2012) Photoluminescence properties and high resolution x-ray diffraction investigation of BInGaAs/GaAs grown by the metalorganic vapour phase epitaxy method J. Appl. Phys. 112, 063109 (2012) Optical properties of InGaPN epilayer with low nitrogen content grown by molecular beam epitaxyIn this work we study the influence of the thiourea/CdCl 2 concentration ratio used for the chemical bath deposition of CdS thin films on glass substrates, upon the CdS/CdTe interface recombination velocity in CdTe/CdS/glass structures, where the CdTe layer was grown on the CdS thin film by close space vapor deposition ͑CSVT͒-hot wall technique. The interface recombination velocity was measured by means of the photoacoustic ͑PA͒ technique in a heat transmission configuration, in which minority carriers are photoexcited at the CdTe layer after illumination through the substrate and the CdS thin film. For data processing, a theoretical model was developed for the generation of the PA signal. We show a reduction in the value of the recombination velocity respecting those obtained for samples where CdS was grown by CSVT, and we observe that a minimal value appears for a thiourea/CdCl 2 ratio in the CdS deposition solution equal to 5. These results show a good correlation with those of electrical measurements performed in solar cell devices.

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Characterization of the passivation of CdS thin films grown by chemical bath deposition on InP

Cited by 12 publications

References 10 publications

Growth and physical properties of CdS thin films prepared by chemical bath deposition

Growth and physical properties of CdS thin films prepared by chemical bath deposition

Effect of ammonium sulphate on chemical bath deposition of CdS thin films

Influence of the thiourea/CdCl2 concentration ratio used for the chemical bath deposition of CdS thin films, upon the CdS/CdTe interface recombination velocity in CdTe/CdS/glass structures.

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