Characterization of the Micro-Structural Properties of InAlN/GaN Epilayer Grown by MOCVD

Abstract

An InAlN/GaN heterostructure has been successfully grown on GaN/sapphire and AlN/sapphire substrate by metal organic chemical vapor deposition. The whole epitaxial quality has been confirmed through X-ray diffraction, while some corresponding micro-structural propagation defects have been characterized by means of transmission electron microscopy. It can be concluded that these defects have been originating from the extended threading dislocation in GaN layer. In addition, with the increasing of acceleration voltage, a series of the cathodoluminescence peak shifting can be clearly observed, and the interesting phenomenon has been attributed to the several complex factors, such as inhomogeneous composition, internal absorption, and so on. Nevertheless, with further optimization of the structural parameters of the epilayers, it can be expected that these experimental results would promote a better epitaxy quality and the optoelectronic device design.

Effects of InGaN-interlayer on closed stripes of GaN grown by serpentine channel patterned sapphire substrate

“…According to Zhu et al the lattice-mismatched epilayers have a high density of TDs and reduce the electrical reliability of GaN-based devices. When defects occur in the materials, the defect energy level might be introduced into the energy band and give different optical signals [9]. According to Dash et al and Khan et al TDs, provides leakage current conduction path.…”