Characterization of the inhomogeneity of Pt/CeO
                  <sub>x</sub>
               /Pt resistive switching devices prepared by magnetron sputtering

Li, Changfang; Zhang, Baolin; Qu, Zhaozhu; Zhao, Hongbin; Li, Qixin; Zeng, Zhaohui; Yang, Rusen

doi:10.1088/1361-6528/abd3ca

Cited by 6 publications

(4 citation statements)

References 31 publications

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“…Annealing in air can also remarkably reduce the oxygen vacancy concentration in CeO x , which has been proven in our previous work [28]. After annealing in an air atmosphere, the Ce 3+ in CeO x lost an electron and was oxidized to Ce 4+ , which was accompanied by the elimination of oxygen vacancies.…”

Section: Journal Of Nanomaterialssupporting

confidence: 66%

Improvement of the Parameter Distribution of TiN/HfO₂/CeO_x/TiN Memristors by Rapid Thermal Annealing

Yao

et al. 2022

Journal of Nanomaterials

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TiN/HfO2/ Ce O x /TiN memristors were prepared by magnetron sputtering. To further improve their performance, the devices were rapidly thermally annealed at different temperatures for different times. Compared with those of unannealed devices, the coefficients of variation (CVs) of the set voltage ( V SET ) and the reset voltage ( V RESET ) were reduced by 35.1% and 59.4%, respectively, and the CVs of the resistances in low and high resistance states ( R LRS and R HRS ) were reduced by 70.2% and 52.7%, respectively, after annealing at 400°C for 2 min in air. Through X-ray diffraction, X-ray photoelectron spectroscopy, and I ‐ V curves of the devices before and after annealing, we propose that the combined effect of grain growth (i.e., grain boundary reduction) and decreased oxygen vacancy content in the switching film resulting from annealing is responsible for the improvement in the switching parameter distribution of TiN/HfO2/ Ce O x /TiN devices. This work presents a simple way to enhance the performance of memristors.

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Section: Journal Of Nanomaterialssupporting

confidence: 66%

Improvement of the Parameter Distribution of TiN/HfO₂/CeO_x/TiN Memristors by Rapid Thermal Annealing

Yao

et al. 2022

Journal of Nanomaterials

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“…The work functions of the top-Pt and bottom-ITO electrodes are 5.65 were 4.4 eV, respectively. 54,55 Additionally, the electron affinity and band gap of the WO x film were 3.64 and 3.01 eV, respectively (Figure 3a). 56 Owing to the difference in work functions of the two metallic electrodes, asymmetric Schottky barriers are formed at the Pt/WO x and WO x /ITO interfaces, with the larger of the two barriers formed at the Pt/WO x surface, as shown in Figure 3a.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Realization of Multiple Synapse Plasticity by Coexistence of Volatile and Nonvolatile Characteristics of Interface Type Memristor

Ju,

Kim,

Park

et al. 2024

ACS Appl. Mater. Interfaces

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Studies on neuromorphic computing systems are becoming increasingly important in the big-data-processing era as these systems are capable of energy-efficient parallel data processing and can overcome the present limitations owing to the von Neumann bottleneck. The Pt/WO x /ITO resistive random-access memory device can be used to implement versatile synapse functions because it possesses both volatile and nonvolatile characteristics. The gradual increase and decrease in the current of the Pt/WO x /ITO device with its uniform resistance state for endurance and retention enables additional synaptic applications that can be controlled using electric pulses. If the volatile and nonvolatile device properties are set through rehearsal and forgetting processes, the device can emulate various synaptic behaviors, such as potentiation and depression, paired-pulse facilitation, post-tetanic potentiation, image training, Hebbian learning rules, excitatory postsynaptic current, and Pavlov's test. Furthermore, reservoir computing can be implemented for applications such as pattern generation and recognition. This emphasizes the various applications of future neuromorphic devices, demonstrating the various favorable characteristics of pulse-enhanced Pt/ WO x /ITO devices.

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“…These materials are not only compatible with CMOS circuits but are also widely used in RRAMs. CeO 2 is a naturally synthesized material with a single Ce 4+ ion and two O 2− ions, but cerium oxide deposited by sputtering has an amorphous formation [ 52 ]. The sputtering deposited CeO 2−x has numerous oxygen vacancies (V o ) within the material layer.…”

Section: Introductionmentioning

confidence: 99%

Short-Term Memory Characteristics of IGZO-Based Three-Terminal Devices

et al. 2023

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A three-terminal synaptic transistor enables more accurate controllability over the conductance compared with traditional two-terminal synaptic devices for the synaptic devices in hardware-oriented neuromorphic systems. In this work, we fabricated IGZO-based three-terminal devices comprising HfAlOx and CeOx layers to demonstrate the synaptic operations. The chemical compositions and thicknesses of the devices were verified by transmission electron microscopy and energy dispersive spectroscopy in cooperation. The excitatory post-synaptic current (EPSC), paired-pulse facilitation (PPF), short-term potentiation (STP), and short-term depression (STD) of the synaptic devices were realized for the short-term memory behaviors. The IGZO-based three-terminal synaptic transistor could thus be controlled appropriately by the amplitude, width, and interval time of the pulses for implementing the neuromorphic systems.

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Characterization of the inhomogeneity of Pt/CeO _x /Pt resistive switching devices prepared by magnetron sputtering

Cited by 6 publications

References 31 publications

Improvement of the Parameter Distribution of TiN/HfO₂/CeO_x/TiN Memristors by Rapid Thermal Annealing

Improvement of the Parameter Distribution of TiN/HfO₂/CeO_x/TiN Memristors by Rapid Thermal Annealing

Realization of Multiple Synapse Plasticity by Coexistence of Volatile and Nonvolatile Characteristics of Interface Type Memristor

Short-Term Memory Characteristics of IGZO-Based Three-Terminal Devices

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Characterization of the inhomogeneity of Pt/CeO x /Pt resistive switching devices prepared by magnetron sputtering

Cited by 6 publications

References 31 publications

Improvement of the Parameter Distribution of TiN/HfO2/CeOx/TiN Memristors by Rapid Thermal Annealing

Improvement of the Parameter Distribution of TiN/HfO2/CeOx/TiN Memristors by Rapid Thermal Annealing

Realization of Multiple Synapse Plasticity by Coexistence of Volatile and Nonvolatile Characteristics of Interface Type Memristor

Short-Term Memory Characteristics of IGZO-Based Three-Terminal Devices

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Characterization of the inhomogeneity of Pt/CeO _x /Pt resistive switching devices prepared by magnetron sputtering

Improvement of the Parameter Distribution of TiN/HfO₂/CeO_x/TiN Memristors by Rapid Thermal Annealing

Improvement of the Parameter Distribution of TiN/HfO₂/CeO_x/TiN Memristors by Rapid Thermal Annealing